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HGTG40N60A4 PDF даташит

Спецификация HGTG40N60A4 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «600V/ SMPS Series N-Channel IGBT».

Детали детали

Номер произв HGTG40N60A4
Описание 600V/ SMPS Series N-Channel IGBT
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGTG40N60A4 Даташит, Описание, Даташиты
Data Sheet
HGTG40N60A4
August 2003
File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25oC and 150oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG40N60A4
TO-247
40N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2









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HGTG40N60A4 Даташит, Описание, Даташиты
HGTG40N60A4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
HGTG40N60A4
600
75
63
300
±20
±30
200A at 600V
625
5
-55 to 150
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
IC = -10mA, VGE = 0V
VCE = BVCES
TJ = 25oC
TJ = 125oC
IC = 40A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 40A, VCE = 0.5 BVCES
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG = 2.2
L = 200µH
Test Circuit (Figure 20)
Turn-Off Energy (Note 2)
EOFF
MIN TYP MAX UNITS
600 - - V
20 -
-
- - 250 µA
- - 3.0 mA
- 1.7 2.7
V
- 1.5 2.0
V
4.5 5.6
7
V
-
-
±250
nA
200 - - A
- 8.5
-
V
- 350 405 nC
- 450 520 nC
- 25
-
ns
- 18
-
ns
- 145
-
ns
- 35
-
ns
- 400
-
µJ
- 850
-
µJ
- 370
-
µJ
©2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2









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HGTG40N60A4 Даташит, Описание, Даташиты
HGTG40N60A4
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG = 2.2
L = 200µH
Test Circuit (Figure 20)
- 27
-
ns
- 20
-
ns
- 185 225 ns
- 55 95 ns
- 400
-
µJ
Turn-On Energy (Note 3)
EON2
- 1220 1400 µJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
- 700 800 µJ
- - 0.2 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
Typical Performance Curves Unless Otherwise Specified
80
70 PACKAGE LIMITED
60
VGE = 15V
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
225 TJ = 150oC, RG = 2.2, VGE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0 100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2003 Fairchild Semiconductor Corporation
HGTG40N60A4 Rev. B2










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