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HGTG5N120BND PDF даташит

Спецификация HGTG5N120BND изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes».

Детали детали

Номер произв HGTG5N120BND
Описание 21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGTG5N120BND Даташит, Описание, Даташиты
Data Sheet
HGTG5N120BND, HGTP5N120BND
May 2003
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are Non-
Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49308. The Diode used is the development type TA49058
(Part number RHRD6120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49306.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG5N120BND
HGTP5N120BND
TO-247
TO-220AB
5N120BND
5N120BND
NOTE: When ordering, use the entire part number. i.e.,
HGTG5N120BND.
Symbol
C
G
Features
• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,682,195
4,803,533
4,605,948
4,684,413
4,809,045
4,620,211
4,694,313
4,809,047
4,631,564
4,717,679
4,810,665
4,639,754
4,743,952
4,823,176
4,639,762
4,783,690
4,837,606
4,641,162
4,794,432
4,860,080
4,644,637
4,801,986
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1









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HGTG5N120BND Даташит, Описание, Даташиты
HGTG5N120BND, HGTP5N120BND
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTG5N120BND
HGTP5N120BND
1200
21
10
40
±20
±30
30A at 1200V
167
1.33
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
VCE = 1200V
TC = 25oC
TC = 125oC
TC = 150oC
IC = 5A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 45µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 5mH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 5A, VCE = 600V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
IC = 5A,
VCE = 600V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = 5A,
VCE = 960V,
VGE = 15V,
RG = 25,
L = 5mH,
Test Circuit (Figure 20)
MIN
1200
-
-
-
-
-
6.0
-
30
TYP
-
-
100
-
2.45
3.7
6.8
-
-
MAX
-
250
-
1.5
2.7
4.2
-
±250
-
UNITS
V
µA
µA
mA
V
V
V
nA
A
- 10.5
-
V
- 53 65 nC
- 60 72 nC
- 22 25 ns
- 15 20 ns
- 160 180 ns
- 130 160 ns
- 450 600 µJ
- 390 450 µJ
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1









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HGTG5N120BND Даташит, Описание, Даташиты
HGTG5N120BND, HGTP5N120BND
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC,
ICE = 5A,
VCE = 960V,
VGE = 15V,
RG = 25,
L = 5mH,
Test Circuit (Figure 20)
IEC = 10A
IEC = 7A, dlEC/dt = 200A/µs
IEC = 1A, dlEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 20 25 ns
- 15 20 ns
- 182 280 ns
- 175 200 ns
- 1000 1300 µJ
- 560 800 µJ
-
2.70
3.50
V
- 50 65 ns
- 30 40 ns
-
-
0.75
oC/W
-
-
1.75
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
25
VGE = 15V
20
15
10
5
0 25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
35
TJ = 150oC, RG = 25, VGE = 15V, L = 5mH
30
25
20
15
10
5
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1










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