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PDF HGTG7N60A4 Data sheet ( Hoja de datos )
| Número de pieza | HGTG7N60A4 | |
| Descripción | 600V/ SMPS Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGT1S7N60A4S9A, HGTG7N60A4
HGTP7N60A4
August 2003
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S7N60A4S9A
HGTG7N60A4
HGTP7N60A4
TO-263AB
TO-247
TO-220AB
7N60A4
7N60A4
7N60A4
NOTE: When ordering, use the entire part number.
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1
1 page  
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
180 RG = 25Ω, L = 1mH, VCE = 390V
160
140 VGE = 15V, TJ = 125oC
120
100
80
60
0
VGE = 12V, TJ = 125oC
VGE = 15V, TJ = 25oC
VGE = 12V, TJ = 25oC
2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
14
90
RG = 25Ω, L = 1mH, VCE = 390V
80
70
TJ = 125oC, VGE = 12V OR 15V
60
50
40 TJ = 25oC, VGE = 12V OR 15V
30
20
0 2 4 6 8 10 12
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
14
120
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
100
80
TJ = 25oC
60
TJ = 125oC
TJ = -55oC
40
20
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
800
RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
600
ICE = 14A
400
ICE = 7A
200 ICE = 3.5A
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
©2003 Fairchild Semiconductor Corporation
15
IG(REF) = 1mA, RL = 43Ω, TJ = 25oC
12 VCE = 600V
VCE = 400V
9
6 VCE = 200V
3
0
0 5 10 15 20 25 30 35
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
40
10 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1 ICE = 14A
ICE = 7A
ICE = 3.5A
0.1
10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGTG7N60A4.PDF ] | |
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