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даташит 2SA1024 PDF ( Datasheet )

2SA1024 Datasheet PDF Download - ETC

Номер произв 2SA1024
Описание PNP Silicon Epitaxial Planar Transistor
Производители ETC
логотип ETC логотип 
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2SA1024 Даташит, Описание, Даташиты
2SA1024 PNP Silicon Epitaxial Planar Transistor
for high voltage applications.
The transistor is subdivided into two groups, O and Y
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
IE
Ptot
Tj
Tstg
Value
150
150
5
50
50
625
150
- 55 to + 150
Unit
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 5 V, -IC = 10 mA
Current Gain Group O hFE
70
- 140 -
Y hFE
120
-
240
-
Collector Base Cutoff Current
at -VCB = 150 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
Base Emitter Voltage
at -VCE = 5 V, -IC = 30 mA
Gain Bandwidth Product
at -VCE = 30 V, -IC = 10 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
-ICBO
-IEBO
-VCE(sat)
-VBE
fT
COB
-
-
-
-
-
-
- 0.1 µA
- 0.1 µA
- 0.8 V
- 0.9 V
120 - MHz
- 5 pF
Page 1 of 1
7/15/2011
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