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AP4435GM-HF Datasheet Download - Advanced Power Electronics

Номер произв AP4435GM-HF
Описание P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

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AP4435GM-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP4435GM-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
RoHS Compliant
Description
D
D
D
D
SO-8
G
S
S
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
-30V
20mΩ
-9A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
- 30
+ 20
-9
-7.3
-50
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200811216
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AP4435GM-HF Даташит, Описание, Даташиты
AP4435GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-7A
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V
ID=-7A
Gate-Source Charge
VDS=-24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-1A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=15Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
-30 -
-V
- - 20 m
- - 32 m
-1 - -3 V
- 16 -
S
- - -1 uA
- - -25 uA
- - +100 nA
- 18 29 nC
- 3 - nC
- 10 - nC
- 8 - ns
- 6.6 - ns
- 44 - ns
- 34 - ns
- 1175 1690 pF
- 195 - pF
- 190 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-2.1A, VGS=0V
IS=-7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 28 - ns
- 18 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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AP4435GM-HF Даташит, Описание, Даташиты
50
T A =25 o C
-10V
-7.0V
40 -5.0V
-4.5V
30 V G = -3.0V
20
10
0
01234
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
32
I D = -5A
28 T A =25 o C
24
20
16
12
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0.1 0.3 0.5 0.7 0.9 1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
AP4435GM-HF
50
T A =150 o C
-10V
-7.0V
40 -5.0V
-4.5V
30
V G = -3.0V
20
10
0
0246
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D = -7A
1.4 V G = -10V
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
150
1.8
1.6
1.4
1.2
1
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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