DataSheet26.com

HGTH12N50E1 PDF даташит

Спецификация HGTH12N50E1 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «10A/ 12A/ 400V and 500V N-Channel IGBTs».

Детали детали

Номер произв HGTH12N50E1
Описание 10A/ 12A/ 400V and 500V N-Channel IGBTs
Производители Intersil Corporation
логотип Intersil Corporation логотип 

7 Pages
scroll

No Preview Available !

HGTH12N50E1 Даташит, Описание, Даташиты
HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
April 1995
10A, 12A,
400V and 500V N-Channel IGBTs
Features
• 10A and 12A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFI: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
Description
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH12N40C1
TO-218AC
G12N40C1
HGTH12N40E1
TO-218AC
G12N40E1
HGTH12N50C1
TO-218AC
G12N50C1
HGTH12N50E1
TO-218AC
G12N50E1
HGTP10N40C1
TO-220AB
G10N40C1
HGTP10N40E1
TO-220AB
G10N40E1
HGTP10N50C1
TO-220AB
G10N50C1
HGTP10N50E1
TO-220AB
G10N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTH12N40C1 HGTH12N50C1
HGTH12N40E1 HGTH12N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating Above TC > +25oC . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . TJ, TSTG
400
400
15
±20
12
17.5
75
0.6
-55 to +150
500
500
15
±20
12
17.5
75
0.6
-55 to +150
HGTP10N40C1
HGTP10N40E1
400
400
-5
±20
10
17.5
60
0.48
-55 to +150
HGTP10N50C1
HGTP10N50E1
500
500
-5
±20
10
17.5
60
0.48
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-15
File Number 1697.3









No Preview Available !

HGTH12N50E1 Даташит, Описание, Даташиты
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
SYMBOL
TEST CONDITIONS
BVCES IC = 1mA, VGE = 0
VGE(TH) VGE = VCE, IC = 1mA
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Collector-Emitter on Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40E1, 50E1
40C1, 50C1
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
40E1, 50E1
40C1, 50C1
Thermal Resistance
Junction-to-Case
ICES
IGES
VCE(ON)
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
VCE = 400V, TC = +25oC
VCE = 500V, TC = +25oC
VCE = 400V, TC = +125oC
VCE = 500V, TC = +125oC
VGE = ±20V, VCE = 0
IC = 10A, VGE = 10V
IC = 17.5A, VGE = 20V
IC = 5A, VCE = 10V
IC = 5A, VCE = 10V
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50
RθJC
HGTH, HGTM
HGTP
LIMITS
HGTH12N40C1, E1, HGTH12N50C1, E1,
HGTP10N40C1, E1 HGTP10N50C1, E1
MIN MAX MIN MAX UNITS
400 - 500 - V
2.0 4.5 2.0 4.5 V
3 (Typ)
3 (Typ)
- 250 -
- µA
- - - 250 µA
- 1000 -
- µA
-
-
-
1000
µA
- 100 - 100 nA
- 2.5 - 2.5 V
- 3.2 - 3.2 V
-
6 (Typ)
-
6 (Typ)
V
- 19 (Typ) - 19 (Typ) nC
- 50 - 50 ns
- 50 - 50 ns
- 400 - 400 ns
680 (Typ)
400
1000
500
680 (Typ)
400
1000
500
ns
ns
680 (Typ)
µJ
400 (Typ)
µJ
-
1.67
-
1.67
oC/W
-
2.083
-
2.083
oC/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-16









No Preview Available !

HGTH12N50E1 Даташит, Описание, Даташиты
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
20.0
VGE = 10V, RGEN = RGE = 100
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TD, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
100
80
60
40
20
0 +25 +50 +75 +100 +125 +150
TC, CASE TEMPERATURE (oC)
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
ZθJC(t) = r(t)RθJC,
D CURVES APPLY FOR POWER PULSE,
TRAIN SHOWN READ TIME AT t1,
TJ(PEAK) - TC = P(PEAK)ZθJC(t)
10
1.0 D = 0.5
D = 0.2
0.1
D = 0.05
0.01
0.01
SINGLE PULSE
0.1 1.0 10
t, TIME (ms)
100 1000
FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-
TERISTICS
17.5
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
15.0 DUTY CYCLE = 0.5% MAX.
12.5
10.0
7.5
5.0
+25oC
2.5
+125oC
-40oC
0 2.5 5.0 7.5 10.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS
17.5
15.0
12.5
10.0
7.5
5.0
2.5
VGE = 20V
VGE = 10V
VGE = 8V
TC = +25oC
VGE = 7V
VGE = 6V
VGE = 5V
VGE = 4V
01 2 34 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. TYPICAL SATURATION CHARACTERISTICS
3-17










Скачать PDF:

[ HGTH12N50E1.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HGTH12N50E110A/ 12A/ 400V and 500V N-Channel IGBTsIntersil Corporation
Intersil Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск