DataSheet26.com

HGTH20N40C1 PDF даташит

Спецификация HGTH20N40C1 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «15A/ 20A/ 400V and 500V N-Channel IGBTs».

Детали детали

Номер произв HGTH20N40C1
Описание 15A/ 20A/ 400V and 500V N-Channel IGBTs
Производители Intersil Corporation
логотип Intersil Corporation логотип 

5 Pages
scroll

No Preview Available !

HGTH20N40C1 Даташит, Описание, Даташиты
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A,
400V and 500V N-Channel IGBTs
Features
• 15A and 20A, 400V and 500V
• VCE(ON) 2.5V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Power Supplies
• Motor Drives
• Protection Circuits
Description
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VCES(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation at TC = +25oC . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . TJ, TSTG
400
400
-5
±20
20
35
100
0.8
-55 to +150
500
500
-5
±20
20
35
100
0.8
-55 to +150
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1
500
500
-5
±20
15
35
75
0.6
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-61
File Number 2174.3









No Preview Available !

HGTH20N40C1 Даташит, Описание, Даташиты
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero-Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Reverse Collector-Emitter
Leakage Current
Collector-Emitter on Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40E1, 50E1
40C1, 50C1
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
40E1, 50E1
40C1, 50C1
Thermal Resistance
Junction-to-Case
SYMBOL
TEST CONDITIONS
BVCES IC = 1mA, VGE = 0
VGE(TH)
ICES
IGES
ICE
VGE = VCE, IC = 1mA
VCE = 400V, TC = +25oC
VCE = 500V, TC = +25oC
VCE = 400V, TC = +125oC
VCE = 500V, TC = +125oC
VGE = ±20V, VCE = 0
RGE = 0, VEC = 5V
VCE(ON)
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
IC = 20A, VGE = 10V
IC = 35A, VGE = 20V
IC = 10A, VCE = 10V
IC = 10A, VCE = 10V
IC = 20A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25
RθJC
HGTH, HGTM
HGTP
LIMITS
HGTH20N40C1, E1, HGTH20N50C1, E1,
HGTP15N40C1, E1 HGTP15N50C1, E1
MIN MAX MIN MAX UNITS
400 - 500 - V
2.0 4.5 2.0 4.5 V
- 250 -
- µA
- - - 250 µA
- 1000 -
- µA
-
-
-
1000
µA
- 100 - 100 nA
- -5 - -5 mA
- 2.5 - 2.5 V
- 3.2 - 3.2 V
-
6 (Typ)
-
6 (Typ)
V
- 33 (Typ) - 33 (Typ) nC
- 50 - 50 ns
- 50 - 50 ns
- 400 - 400 ns
680 (Typ)
400
1000
500
680 (Typ)
400
1000
500
ns
ns
1810 (Typ)
µJ
1070 (Typ)
µJ
-
1.25
-
1.25
oC/W
-
1.67
-
1.67
oC/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-62









No Preview Available !

HGTH20N40C1 Даташит, Описание, Даташиты
HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
40
VGE = 10V, RGEN = RGS = 50
35
30
25
20
15
10
5
0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 25,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
100
80
60
40
20
0 +25 +50 +75 +100 +125 +150
TC, CASE TEMPERATURE (oC)
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING
CURVE
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TC, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-
AGE vs JUNCTION TEMPERATURE
35
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
30 DUTY CYCLE = 0.5% MAX.
25
20
15
10
+25oC
-40oC
5
+125oC
0
0 2.5 5.0 7.5 10.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
35
VGE = 20V
30 VGE = 10V
VGE = 8V
25
TC = +25oC
VGE = 7V
VGE = 6V
20
15 VGE = 5V
10
5 VGE = 4V
0
01 2 34 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
35
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX.
25
20
15 +25oC
10
5
0
012 34
VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-63










Скачать PDF:

[ HGTH20N40C1.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
HGTH20N40C115A/ 20A/ 400V and 500V N-Channel IGBTsIntersil Corporation
Intersil Corporation
HGTH20N40C1D20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil Corporation
Intersil Corporation

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск