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HGTP10N40F1D PDF даташит

Спецификация HGTP10N40F1D изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes».

Детали детали

Номер произв HGTP10N40F1D
Описание 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTP10N40F1D Даташит, Описание, Даташиты
April 1995
HGTP10N40F1D,
HGTP10N50F1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• tRR < 60ns
Description
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25oC
and +150oC. The diode used in parallel with the IGBT is an
ultrafast (tRR < 60ns) with soft recovery characteristic.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40F1D TO-220AB
10N40F1D
HGTP10N50F1D TO-220AB
10N50F1D
NOTE: When ordering, use the entire part number
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
NOTE:
1. TJ = +150oC, Min. RGE = 25without latch.
HGTP10N40F1D
400
400
12
10
12
±20
16
10
75
0.6
-55 to +150
260
HGTP10N50F1D
500
500
12
10
12
±20
16
10
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/oC
oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-25
File Number 2751.2









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HGTP10N40F1D Даташит, Описание, Даташиты
Specifications HGTP10N40F1D, HGTP10N50F1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
Turn-Off Delay Time
Fall Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
Thermal Resistance Junction-to-
Case (IGBT)
Thermal Resistance of Diode
Diode Forward Voltage
Diode Reverse Recovery Time
SYMBOL
TEST CONDITIONS
BVCES IC = 1.25mA, VGE = 0V
VGE(TH)
ICES
IGES
VCE(ON)
VGEP
QG(ON)
tD(ON)
tRI
tD(OFF)
tFI
WOFF
VGE = VCE, IC = 1mA
TJ = +150oC, VCE = 400V
TJ = +150oC, VCE = 500V
VGE = ±20V, VCE = 0V
TJ = +150oC, IC = 5A, VGE = 10V
TJ = +150oC, IC = 5A, VGE = 15V
TJ = +25oC, IC = 5A, VGE = 10V
TJ = +25oC, IC = 5A, VGE = 15V
IC = 5A, VCE = 10V
IC = 5A, VCE = 10V
Resistive Load, IC = 5A,
VCE = 400V, RL = 80,
TJ = +150oC, VGE = 10V,
RG = 25
tD(OFF)I
tFI
WOFF
Inductive Load (See Figure 13),
IC = 5A, VCE(CLP) = 400V, RL =
80, L = 50µH, TJ = +150oC, VGE =
10V, RG = 25
RθJC
RθJC
VEC
tRR
IEC = 10A
IEC = 10A, dIEC/dt = 100A/µs
LIMITS
HGTP10N40F1D HGTP10N50F1D
MIN MAX MIN MAX
400 - 500 -
2.0 4.5 2.0 4.5
- 1.25 -
-
- - - 1.25
- 100 - 100
- 2.5 - 2.5
- 2.2 - 2.2
- 2.5 - 2.5
- 2.2 - 2.2
5.3 (Typ)
13.4 (Typ)
45 (Typ)
35 (Typ)
130 (Typ)
1400 (Typ)
0.64 (Typ)
- 375 - 375
- 1200 - 1200
- 1.2 - 1.2
- 1.67 - 1.67
- 2.0 - 2.0
- 1.7 - 1.7
- 60 - 60
UNITS
V
V
mA
mA
nA
V
V
V
V
V
nC
ns
ns
ns
ns
mJ
ns
ns
mJ
oC/W
oC/W
V
ns
Typical Performance Curves
12
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
10 DUTY CYCLE < 2%
8
TC = -55oC
6
4 TC = -55oC
2 TC = +25oC
TC = +150oC
0
0 2 4 6 8 10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
10
VGE = 10V
VGE = 6.0V
8 PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
TC = +25oC
6 VGE = 5.5V
VGE = 5.0V
4
VGE = 4.5V
2
VGE = 4.0V
0
0 2 4 6 8 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-26









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HGTP10N40F1D Даташит, Описание, Даташиты
HGTP10N40F1D, HGTP10N50F1D
Typical Performance Curves (Continued)
4
TJ = +150oC
3 VGE = 10V
2
VGE = 15V
1
0
1 10 100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
1000
800
f = 1MHz
18
16
14 VGE = 15V
12
10
VGE = 10V
8
6
4
2
0
+25
+50
+75
+100
+125
TC, CASE TEMPERATURE (oC)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
0.5
TJ +150oC, VCE = 400V
L = 50µH
0.4
+150
600
CISS
400
200
COSS
CRSS
0
0 5 10 15 20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
25
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
2
TJ = +150oC, VGE = 10V
RG = 25, L = 50µH
0.3
VGE = 15V, RG = 50
0.2 VGE = 10V, RG = 50
VGE = 15V, RG = 25
0.1 VGE = 10V, RG = 25
0.0
1
ICE, COLLECTOR-EMITTER CURRENT (A)
10
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
10
TJ = +150oC, VGE = 10V
RG = 25, L = 50µH
VCE = 400V
1 1.0
VCE = 400V
VCE = 200V
0
1 10 100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
0.1
1
10 100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
3-27










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Номер в каталогеОписаниеПроизводители
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