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HGTP10N50C1D PDF даташит

Спецификация HGTP10N50C1D изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes».

Детали детали

Номер произв HGTP10N50C1D
Описание 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTP10N50C1D Даташит, Описание, Даташиты
April 1995
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTP10N40C1D
HGTP10N40E1D
400
400
±20
17.5
10
75
0.6
-55 to +150
HGTP10N50C1D
HGTP10N50E1D
500
500
±20
17.5
10
75
0.6
-55 to +150
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-20
File Number 2405.5









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HGTP10N50C1D Даташит, Описание, Даташиты
Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN MAX MIN MAX UNITS
Collector-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Collector-Emitter On Voltage
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
40E1D, 50E1D
BVCES
VGE(TH)
ICES
IGES
VCE(ON)
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
IC = 1mA, VGE = 0
400 - 500 -
VGE = VCE, IC = 1mA
2.0 4.5 2.0 4.5
VCE = 400V, TC = +25oC
-
250
-
-
VCE = 500V, TC = +25oC
-
-
- 250
VCE = 400V, TC = +125oC
-
1000
-
-
VCE = 500V, TC = +125oC
-
-
- 1000
VGE = ±20V, VCE = 0
- 100 - 100
IC = 10A, VGE = 10V
- 2.5 - 2.5
IC = 17.5A, VGE = 20V
- 3.2 - 3.2
IC = 5A, VCE = 10V
- 6 (Typ) - 6 (Typ)
IC = 5A, VCE = 10V
- 19 (Typ) - 19 (Typ)
IC = 10A, VCE(CLP) = 300V,
-
50
-
50
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50
- 50 - 50
- 400 - 400
680 (Typ) 1000 680 (Typ) 1000
V
V
µA
µA
µA
µA
nA
V
V
V
nC
ns
ns
ns
ns
40C1D, 50C1D
400 (Typ) 500 400 (Typ) 500
ns
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
WOFF x Frequency)
40E1D, 50E1D
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50
1810 (Typ)
µJ
40C1D, 50C1D
Thermal Resistance Junction-to-Case
Diode Forward Voltage
Diode Reverse Recovery Time
RθJC
VEC
tRR
IEC = 10A
IEC = 10A, di/dt = 100A/µs
-
-
-
1070 (Typ)
1.67 -
2-
100 -
1.67
2
100
µJ
oC/W
V
ns
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-21









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HGTP10N50C1D Даташит, Описание, Даташиты
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves
20.0
17.5
VGE = 10V, RGEN = RGS = 100
15.0
12.5
10.0
7.5
5.0
2.5
0
-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
100
80
60
40
20
0 +25 +50 +75 +100 +125 +150
TC, CASE TEMPERATURE (oC)
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
+50
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
35
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
30 DUTY CYCLE = 0.5% MAX.
25
20
15
10
+25oC
-40oC
5
+125oC
0
0 2.5 5.0 7.5 10.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
35
VGE = 20V
30 VGE = 10V
VGE = 8V
25
TC = +25oC
VGE = 7V
VGE = 6V
20
15 VGE = 5V
10
5 VGE = 4V
0
01 2 34 5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
35
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX.
25
20
15 +25oC
10
5
0
012 34
VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-22










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Номер в каталогеОписаниеПроизводители
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HGTP10N50C1D10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil Corporation
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