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What is HGTP12N60A4D?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode".


HGTP12N60A4D Datasheet PDF - Fairchild Semiconductor

Part Number HGTP12N60A4D
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturers Fairchild Semiconductor　
Logo Fairchild Semiconductor Logo　


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Data Sheet
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Ordering Information
PART NUMBER
HGTG12N60A4D
PACKAGE
TO-247
BRAND
12N60A4D
HGTP12N60A4D
HGT1S12N60A4DS
TO-220AB
TO-263AB
12N60A4D
12N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Symbol
C
G
E
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsermi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B

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HGTP12N60A4D equivalent
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
115
RG = 10Ω, L = 500µH, VCE = 390V
110
VGE = 12V, VGE = 15V, TJ = 125oC
105
100
95
VGE = 12V, VGE = 15V, TJ = 25oC
90
85
2
4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
90
RG = 10Ω, L = 500µH, VCE = 390V
80
70 TJ = 125oC, VGE = 12V OR 15V
60
50
40
30 TJ = 25oC, VGE = 12V OR 15V
20
10
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
250
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
200
TJ = 25oC
150 TJ = -55oC
100 TJ = 125oC
50
0
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
16
IG(REF) = 1mA, RL = 25Ω, TC = 25oC
14
12
VCE = 600V
10
VCE = 400V
8
6 VCE = 200V
4
2
0
0 10 20 30 40 50 60
QG, GATE CHARGE (nC)
70
FIGURE 14. GATE CHARGE WAVEFORMS
80
1.2
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
1.0 ETOTAL = EON2 + EOFF
0.8
ICE = 24A
0.6
0.4
0.2
0
25
ICE = 12A
ICE = 6A
50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
150
©2001 Fairchild Semiconductor Corporation
10
TJ = 125oC, L = 500µH,
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
5
10
100
RG, GATE RESISTANCE (Ω)
1000
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B


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