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PDF HGTP12N60B3D Data sheet ( Hoja de datos )
| Número de pieza | HGTP12N60B3D | |
| Descripción | 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS
December 2001
27A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49171. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49173.
Ordering Information
PART NUMBER
HGTP12N60B3D
PACKAGE
TO-220AB
BRAND
12N60B3D
HGTG12N60B3D
HGT1S12N60B3DS
TO-247
TO-263AB
12N60B3D
12N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60B3DS9A.
Symbol
C
G
E
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B
1 page  
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
300
RG = 25Ω, L = 1mH, VCE = 480V
275
250
225 TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10 15 20 25
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 25Ω, L = 1mH, VCE = 480V
130
120
110
TJ = 150oC, VGE = 10V, VGE = 15V
100
90
80 TJ = 25oC, VGE = 10V OR 15V
70
60
5 10
15 20
25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
180
DUTY CYCLE < 0.5%, VCE = 10V
160 PULSE DURATION = 250µs
140 TC = 25oC
TC = -55oC
120
100
80 TC = 150oC
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
Ig (REF) = 1mA, RL = 25Ω, TC = 25oC
12
VCE = 600V
9
6
VCE = 400V
VCE = 200V
3
0
0 5 10 15 20 25 30 35 40 45 50
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
2.5
2.0 CIES
FREQUENCY = 1MHz
1.5
1.0
0.5
0
0
COES
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HGTP12N60B3D.PDF ] | |
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