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PDF HGTP12N60C3D Data sheet ( Hoja de datos )
| Número de pieza | HGTP12N60C3D | |
| Descripción | 24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HGTP12N60C3D, HGT1S12N60C3DS
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49182.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP12N60C3D
TO-220AB
12N60C3D
HGT1S12N60C3DS
TO-263AB
12N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in Tape and Reel, i.e.,
HGT1S12N60C3DS9A.
Symbol
C
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,682,195
4,605,948
4,684,413
4,620,211
4,694,313
4,631,564
4,717,679
4,639,754
4,743,952
4,639,762
4,783,690
4,641,162
4,794,432
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
1 page  
HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
2.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
1.5
VGE = 10V
1.0
VGE = 15V
0.5
0
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10
1
5
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
2500
2000
1500
FREQUENCY = 1MHz
CIES
1000
500
0
0
CRES
COES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
3.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
2.5
2.0
1.5
VGE = 10V or 15V
1.0
0.5
0
5 10 15 20 25 30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
100 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0 100 200 300 400 500 600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
15
IG REF = 1.276mA, RL = 50Ω, TC = 25oC
12
VCE = 600V
9
6 VCE = 400V
VCE = 200V
3
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
60
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGTP12N60C3D.PDF ] | |
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