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W24NM60N PDF даташит

Спецификация W24NM60N изготовлена ​​​​«STMicroelectronics» и имеет функцию, называемую « STW24NM60N».

Детали детали

Номер произв W24NM60N
Описание STW24NM60N
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W24NM60N Даташит, Описание, Даташиты
STF24NM60N, STI24NM60N
STP24NM60N, STW24NM60N
N-channel 600 V, 0.168 , 17 A MDmesh™ II Power MOSFET
TO-220FP, I2PAK, TO-220 and TO-247
Features
Order codes
STF24NM60N
STI24NM60N
STP24NM60N
STW24NM60N
VDSS
(@Tjmax)
650 V
650 V
650 V
650 V
RDS(on)
max.
< 0.19
< 0.19
< 0.19
< 0.19
ID
17 A
17 A
17 A
17 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-220FP
TAB
123
I2PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$OR4!"
'
3
Table 1. Device summary
Order codes
STF24NM60N
STI24NM60N
STP24NM60N
STW24NM60N
Marking
24NM60N
Package
TO-220FP
I2PAK
TO-220
TO-247
!-V
Packaging
Tube
August 2011
Doc ID 18047 Rev 3
1/19
www.st.com
19
Free Datasheet http://www.datasheet4u.net/









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W24NM60N Даташит, Описание, Даташиты
Contents
Contents
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 18047 Rev 3
Free Datasheet http://www.datasheet4u.net/









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W24NM60N Даташит, Описание, Даташиты
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
I2PAK
TO-220
TO-247
TO-220FP
VGS
ID
ID
IDM (2)
PTOT
dv/dt(3)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
± 30
17 17 (1)
11 11 (1)
68 68 (1)
125 30
15
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;TC=25 °C)
Operating junction temperature
Storage temperature
2500
-55 to 150
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD 17 A, di/dt 400 A/µs, peak VDS V(BR)DSS, VDD = 80% V(BR)DSS
Unit
V
A
A
A
W
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Value
TO-220FP I2PAK TO-220 TO-247
Unit
Rthj-case
Thermal resistance junction-case
max.
4
1
Rthj-amb
Thermal resistance junction-ambient
max.
62.5
TJ
Maximum lead temperature for
soldering purpose
300
°C/W
50 °C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Doc ID 18047 Rev 3
Value
6
300
Unit
A
mJ
3/19
Free Datasheet http://www.datasheet4u.net/










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Номер в каталогеОписаниеПроизводители
W24NM60N STW24NM60NSTMicroelectronics
STMicroelectronics

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