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HGTP14N37G3VL PDF даташит

Спецификация HGTP14N37G3VL изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «14A/ 370V N-Channel/ Logic Level/ Voltage Clamping IGBTs».

Детали детали

Номер произв HGTP14N37G3VL
Описание 14A/ 370V N-Channel/ Logic Level/ Voltage Clamping IGBTs
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGTP14N37G3VL Даташит, Описание, Даташиты
HGT1S14N37G3VLS, HGTP14N37G3VL
Data Sheet
December 2001
14A, 370V N-Channel, Logic Level, Voltage
Clamping IGBTs
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in
automotive ignition circuits. Unique features include an
active voltage clamp between the collector and the gate
which provides Self Clamped Inductive Switching (SCIS)
capability in ignition circuits. Internal diodes provide ESD
protection for the logic level gate. Both a series resistor and
a shunt resister are provided in the gate circuit.
Formerly Developmental Type TA49169.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S14N37G3VLS
HGTP14N37G3VL
TO-263AB
TO-220AB
14N37GVL
14N37GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A
Symbol
COLLECTOR
GATE
R1
R2
EMITTER
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Internal Series and Shunt Gate Resistors
• Low Conduction Loss
• Ignition Energy Capable
Packaging
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B









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HGTP14N37G3VL Даташит, Описание, Даташиты
HGT1S14N37G3VLS, HGTP14N37G3VL
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS
Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS
at L = 3mH, T
C = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS
Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ
Electrostatic Voltage HBM at 250pF, 1500All Pin Configurations. . . . . . . . . . . . . . . . . . ESD
Electrostatic Voltage MM at 200pF, 0All Pin Configurations. . . . . . . . . . . . . . . . . . . . . . ESD
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
HGT1S14N37G3VLS,
HGTP14N37G3VL
380
24
25
18
±10
15
11.5
340
136
0.91
-55 to 175
-55 to 175
5
2
300
260
UNITS
V
V
A
A
V
A
A
mJ
W
W/oC
oC
oC
kV
kV
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. May be exceeded if IGEM is limited to 10mA.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Gate to Emitter Plateau Voltage
Gate Charge
BVCER
VGEP
QG(ON)
IC
TJ
=
=
10mA,
-55oC
tRoG17=51okC(,FVigGuEre=106V) ,
IC = 6.5A, VCE = 12V
IC = 6.5A, VCE = 12V, VGE = 5V
(Figure 16)
Collector to Emitter Clamp Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Collector to Emitter On-State Voltage
Gate to Emitter Threshold Voltage
Gate Series Resistance
Gate to Emitter Resistance
Gate to Emitter Leakage Current
BVCE(CL)
BVECS
ICES
IECS
VCE(ON)
VGE(TH)
R1
R2
IGES
IC = 15A, RG = 1k
IC = 10mA
VCE = 300V, VGE = 0V
(Figure 13)
VCE = 250V,
VGE = 0V (Figure 13)
VEC = -24V,
VGE = 0V (Figure 13)
IC = 6A, VGE = 4.0V
(Figures 3 through 9)
IC = 10A, VGE = 4.5V
(Figures 3 through 9)
IC = 14A, VGE = 5V
(Figures 3 through 9)
TJ = 25oC
TJ = 175oC
TJ = 25oC
TJ = 175oC
TJ = 25oC
TJ = 175oC
TJ = -55oC
TJ = 25oC
TJ = 25oC
TJ = 175oC
TJ = 25oC
TJ = 175oC
IC = 1mA, VCE = VGE (Figure 12)
VGE = ±10V
MIN
320
-
-
320
24
-
-
-
-
-
-
-
-
-
-
-
-
1.3
-
10
±310
TYP
350
2.76
27
350
28
-
-
-
-
-
-
1.3
1.25
1.45
1.5
1.6
1.7
1.8
70
18
±500
MAX
380
-
-
380
-
40
250
10
75
10
50
1.45
1.6
1.75
1.9
2
2.3
2.2
150
26
±1000
UNITS
V
V
nC
V
V
µA
µA
µA
µA
mA
mA
V
V
V
V
V
V
V
k
µA
©2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B









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HGTP14N37G3VL Даташит, Описание, Даташиты
HGT1S14N37G3VLS, HGTP14N37G3VL
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Gate to Emitter Breakdown Voltage
Current Turn-On Delay Time -
Resistive Load
BVGES
td(ON)I
IGES = ±2mA
IC = 6.5A, RG =
RL = 2.1, VDD
1k, VGE
= 14V, TJ
=
=
5V,
150oC
(Figure 14)
±12 ±14
-1
-
4
V
µs
Current Turn-On Rise Time -
Resistive Load
Current Turn-Off Time -
Inductive Load
Inductive Use Test
Thermal Resistance
trI IC = 6.5A, RG = 1k
VGE
VDD
=
=
51V4V, R, TLJ==21.150oC
(Figure
14)
td(OFF)I + tfI IC = 6.5A, RG = 1k
VGE = 5V, L = 300µH
VDD = 300V, TJ = 150oC (Figure 14)
ISCIS
L = 3mH, VG = 5V,
RG = 1k
(Figures 1 and 2)
TC = 150oC
TC = 25oC
RθJC
(Figure 18)
-
-
11.5
15
-
3
10
-
-
-
7 µs
30 µs
-A
-A
1.1 oC/W
Typical Performance Curves Unless Otherwise Specified
60
RG = 1k, VGE = 5V
52
44 ISCIS CAN BE LIMITED BY gfs at VGE = 5V
36
28 TJ = 25oC
20
12
4
40
TJ = 150oC
80 120 160
tAV, TIME IN AVALANCHE (ms)
200
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs TIME IN AVALANCHE
56
RG = 1k, VGE = 5V
48
40 ISCIS CAN BE LIMITED BY gfs at VGE = 5V
32
24
16
8 TJ = 150oC
TJ = 25oC
0
02468
L, INDUCTANCE (mH)
10
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT vs INDUCTANCE
1.28
1.24
ICE = 6A
1.20
1.16
1.12
1.08
VGE = 4.5V
VGE = 4.0V
1.04
VGE = 5.0V
1.00
-50
25 100
TJ, JUNCTION TEMPERATURE (oC)
175
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERARURE
1.50
1.46
1.42
1.38
ICE = 10A
VGE = 4.0V
VGE = 4.5V
1.34
VGE = 5.0V
1.30
-50
25 100
TJ, JUNCTION TEMPERATURE (oC)
175
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B










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Номер в каталогеОписаниеПроизводители
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Fairchild Semiconductor

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