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HGTP15N120C3 PDF даташит

Спецификация HGTP15N120C3 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «35A/ 1200V/ UFS Series N-Channel IGBTs».

Детали детали

Номер произв HGTP15N120C3
Описание 35A/ 1200V/ UFS Series N-Channel IGBTs
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTP15N120C3 Даташит, Описание, Даташиты
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3, HGT1S15N120C3S
June 1997
35A, 1200V, UFS Series N-Channel IGBTs
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Ordering Information
PART NUMBER
HGTG15N120C3
PACKAGE
TO-247
BRAND
15N120C3
HGTP15N120C3
HGT1S15N120C3
TO-220AB
TO-262AA
15N120C3
15N120C3
Description
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar tran-
sistor. The much lower on-state voltage drop varies only moder-
ately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Symbol
C
HGT1S15N120C3S TO-263AB
15N120C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.
Formerly Developmental Type TA49145.
G
E
Packaging
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
JEDEC TO-220AB (ALTERNATE VERSION)
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4244.3









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HGTP15N120C3 Даташит, Описание, Даташиты
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3S, HGT1S15N120C3S
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC
1200
35
15
120
±20
±30
15A at 1200V
164
1.32
100
-55 to 150
260
6
25
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 720V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
BVECS
ICES
VCE(SAT)
IC = 10mA, VGE = 0V
VCE = BVCES
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
15 25
-
V
- - 250 µA
- - 3.0 mA
- 2.3 3.5 V
- 2.4 3.2 V
Gate to Emitter Threshold Voltage
VGE(TH) IC = 250µA, VCE = VGE
4.0 5.6 7.5
V
Gate to Emitter Leakage Current
Switching SOA
IGES
SSOA
VGE = ±20V
TJ = 150oC, RG = 10
VGE = 15V, L = 1mH
VCE(PK) = 960V
VCE(PK) = 1200V
-
40
15
- ±100 nA
- -A
- -A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
- 8.8 -
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
Qg(ON)
td(ON)I
tr I
td(OFF)I
tfI
EON
EOFF
RθJC
IC = IC110,
VCE = 0.5 BVES
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 10
L = 1mH
VGE = 15V
VGE = 20V
- 75 100 nC
-
100 130
nC
- 17 - ns
- 25 - ns
-
470 550
ns
-
350 400
ns
- 2100 -
µJ
- 4700 -
µJ
- - 0.76 oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.
2









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HGTP15N120C3 Даташит, Описание, Даташиты
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Typical Performance Curves
100
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
80
TC = -55oC
60
TC = 150oC
40
TC = 25oC
20
80 DUTY CYCLE <0.5%, TC = 25oC
PULSE DURATION = 250µs
60
40
20
VGE = 15V
12V
10V
9V
8.5V
8V
0
6 8 10 12 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
0
0
2
4
6
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
10
25
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
20 TC = 25oC
15
TC = 150oC
10
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
80
60
40
TC = 25oC
TC = 150oC
5 20
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
35
VGE = 15V
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
35
VCE = 720V, RGE = 25, TJ = 125oC
30
ISC
25
150
125
100
20 75
15 50
tSC
10
10
11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
25
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3










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Номер в каталогеОписаниеПроизводители
HGTP15N120C335A/ 1200V/ UFS Series N-Channel IGBTsIntersil Corporation
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