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PDF 7MBP100RUA060 Data sheet ( Hoja de datos )
| Número de pieza | 7MBP100RUA060 | |
| Descripción | U-Series IGBT IPMs | |
| Fabricantes | Fuji | |
| Logotipo |  |
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U-series of IGBT-IPMs (600 V)
Kiyoshi Sekigawa
Hiroshi Endo
Hiroki Wakimoto
1. Introduction
Intelligent power modules (IPMs) are intelligent
power devices that incorporate drive circuits, protec-
tion circuits or other functionality into a modular
configuration. IPMs are widely used in motor driving
(general purpose inverter, servo, air conditioning,
elevator, etc.) and power supply (UPS, PV, etc.)
applications.
The equipment that uses these IPMs are required
to have small size, high efficiency, low noise, long
service life and high reliability.
In response to these requirements, in 1997, Fuji
Electric developed the industry’s first internal over-
heat protection function for insulated gate bipolar
transistors (IGBTs) and developed an R-IPM series
that achieved high reliability by employing an all-
silicon construction that enabled a reduction in the
number of components used.
Then in 2002, Fuji Electric changed the structure of
its IGBT chips from the punch through (PT) structure,
which had been in use previously, to a non-punch
through (NPT) structure, for which lifetime control is
unnecessary, in order to realize lower turn-off loss at
high temperature, and also established finer planar gate
and thin wafer processing technology to develop an R-
IPM3 series that realizes low conduction loss.
With the goal of reducing loss even further, Fuji
Electric has developed an IGBT device that employs a
trench NPT structure to realize lower conduction loss
and has developed a new free wheeling diode (FWD)
structure to improve the tradeoff between switching
noise and loss. Both of these technologies are incorpo-
rated into Fuji Electric’s newly developed U-series
IGBT-IPM (U-IPM) which is introduced below.
2. U-IPM Development Concepts and Product
Line-up
The concepts behind the development of the U-IPM
are listed below.
(1) Realization of lower loss
Lower loss can be realized by developing new
power elements and optimizing the drive performance.
Increasing the carrier frequency of the equipment
contributes to improved control performance. Also,
larger output can be obtained from the equipment
during the operation at the same carrier frequency.
(2) Continued use of the same package as prior
products
Table 1 Product line-up, characteristics and internal functions of the U-IPM series
Inverter part Brake part
Internal function
No. of
elements
Model
VDC VCES
(V) (V)
IC
(A)
PC
(W)
IC
PC
Both upper and
lower arms
Upper arm Lower arm
Package
type
(A) (W)
Dr UV TjOH OC ALM OC ALM TcOH
6MBP 20RUA060
20 84 –
– Yes Yes Yes None None Yes Yes None P619
6MBP 50RUA060
50 176 –
– Yes Yes Yes Yes None Yes Yes Yes
P610
6 in 1 6MBP 80RUA060 450 600 80 283 –
– Yes Yes Yes Yes None Yes Yes Yes
P610
6MBP100RUA060
100 360 –
– Yes Yes Yes Yes None Yes Yes Yes
P611
6MBP160RUA060
160 431 –
– Yes Yes Yes Yes None Yes Yes Yes
P611
7MBP 50RUA060
50 176 30 120 Yes Yes Yes Yes None Yes Yes Yes
P610
7MBP 80RUA060
80 283 50 176 Yes Yes Yes Yes None Yes Yes Yes
7 in 1
450 600
7MBP100RUA060
100 360 50 176 Yes Yes Yes Yes None Yes Yes Yes
P610
P611
7MBP160RUA060
160 431 50 176 Yes Yes Yes Yes None Yes Yes Yes
P611
Dr: IGBT driving circuit, UV : Under voltage lockout for control circuit, TjOH: Device overheat protection, OC: Over-current protection, ALM: Alarm output,
TcOH: Case temperature over-heat protection
*6MBP20RUA060 uses a shunt resistance-based over-current detection method at the N line.
48 Vol. 51 No. 2 FUJI ELECTRIC REVIEW
Free Datasheet http://www.datasheet4u.net/
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