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HGTP2N120BND PDF даташит

Спецификация HGTP2N120BND изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode».

Детали детали

Номер произв HGTP2N120BND
Описание 12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTP2N120BND Даташит, Описание, Даташиты
HGTP2N120BND, HGT1S2N120BNDS
Data Sheet
January 2000 File Number 4698.2
12A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP2N120BND and HGT1S2N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49312. The Diode used is the development type TA49056.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49310.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP2N120BND
TO-220AB
2N120BND
HGT1S2N120BNDS TO-263AB
2N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120BNDS9A.
Symbol
C
G
E
Features
• 12A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000









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HGTP2N120BND Даташит, Описание, Даташиты
HGTP2N120BND, HGT1S2N120BNDS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTP2N120BND
HGT1S2N120BNDS
1200
12
5.6
20
±20
±30
12A at 1200V
104
0.83
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 51.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = 2.3A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 40µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 51Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V
IC = 2.3A, VCE = 0.5 BVCES
IC = 10A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 2.3A
VCE = 0.8 BVCES
VGE = 15V
RG = 51
L = 5mH
Test Circuit (Figure 20)
Turn-Off Energy (Note 3)
EOFF
MIN TYP MAX UNITS
1200
-
-
V
- - 250 µA
- 50 - µA
- - 0.6 mA
- 2.45 2.7
V
- 3.6 4.2
V
6.0 6.8
-
V
-
-
±250
nA
12 - - A
- 10.2 -
V
- 24 30 nC
- 32 39 nC
- 21 25 ns
- 11 15 ns
- 185 240 ns
- 100 130 ns
- 370 500 µJ
- 195 270 µJ
2









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HGTP2N120BND Даташит, Описание, Даташиты
HGTP2N120BND, HGT1S2N120BNDS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 2.3A
VCE = 0.8 BVCES
VGE = 15V
RG = 51
L = 5mH
Test Circuit (Figure 20)
IEC = 2.3A
IEC = 2.3A, dlEC/dt = 200A/µs
IEC = 1A, dlEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 25 30 ns
- 11 15 ns
- 195 260 ns
- 160 200 ns
-
725 1000
µJ
- 280 380 µJ
- - 3.2 V
- 52 60 ns
- 38 44 ns
-
-
1.20
oC/W
- - 2.5 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
12
VGE = 15V
10
8
6
4
2
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
14
TJ = 150oC, RG = 51, VGE = 15V, L = 1mH
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3










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Номер в каталогеОписаниеПроизводители
HGTP2N120BN12A/ 1200V/ NPT Series N-Channel IGBTIntersil Corporation
Intersil Corporation
HGTP2N120BND12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeIntersil Corporation
Intersil Corporation

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