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HGTP3N60A4D PDF даташит

Спецификация HGTP3N60A4D изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode».

Детали детали

Номер произв HGTP3N60A4D
Описание 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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HGTP3N60A4D Даташит, Описание, Даташиты
Data Sheet
HGT1S3N60A4DS, HGTP3N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49329.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S3N60A4DS
TO-263AB
3N60A4D
HGTP3N60A4D
TO-220AB
3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
Symbol
C
G
E
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.Fairchildsemi.com
Packaging
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B









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HGTP3N60A4D Даташит, Описание, Даташиты
HGT1S3N60A4DS, HGTP3N60A4D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
HGT1S3N60A4DS
HGTP3N60A4D
600
17
8
40
±20
±30
15A at 600V
70
0.58
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
IC = 250µA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 3A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 50, VGE = 15V,
L = 200µH, VCE = 600V
IC = 3A, VCE = 300V
IC = 3A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC,
ICE = 3A,
VCE = 390V,
VGE = 15V,
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
EON2
EOFF
MIN TYP MAX UNITS
600 - - V
- - 250 µA
- - 3.0 mA
- 2.0 2.7
V
- 1.6 2.2
V
4.5 6.1
7.0
V
-
-
±250
nA
15 - - A
- 8.8
-
V
- 21 25 nC
- 26 32 nC
- 6 - ns
- 11
-
ns
- 73
-
ns
- 47
-
ns
- 37
-
µJ
- 55 70 µJ
- 25 35 µJ
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B









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HGTP3N60A4D Даташит, Описание, Даташиты
HGT1S3N60A4DS, HGTP3N60A4D
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
VEC
trr
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 125oC,
ICE = 3A,
VCE = 390V, VGE = 15V,
RG = 50Ω,
L = 1mH,
Test Circuit (Figure 24)
IEC = 3A
IEC = 3A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
MIN TYP MAX UNITS
- 5.5 8
ns
- 12 15 ns
- 110 165 ns
-
70 100
ns
- 37
-
µJ
-
90 100
µJ
- 50 80 µJ
- 2.25 -
V
- 29
-
ns
- 19
-
ns
- - 1.8 oC/W
- - 3.5 oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
20
VGE = 15V
16
20
TJ = 150oC, RG = 50, VGE = 15V, L = 200µH
16
12 12
88
4
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
4
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation
HGT1S3N60A4DS, HGTP3N60A4D Rev. B










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