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PDF HGTP3N60B3D Data sheet ( Hoja de datos )
| Número de pieza | HGTP3N60B3D | |
| Descripción | 7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
HGTP3N60B3D, HGT1S3N60B3DS
January 2000 File Number 4414.1
7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25oC and
150oC. The diode used in anti-parallel with the IGBT is the
RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49193.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP3N60B3D
TO-220AB
G3N60B3D
HGT1S3N60B3DS
TO-263AB
G3N60B3D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.
Symbol
C
G
E
Features
• 7A, 600V TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
• TB334 “Guidelines for Soldering Surface Mount
- Components to PC Boards
Packaging
JEDEC TO-220AB
COLLECTOR
(FLANGE)
ECG
TO-263, TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1 page  
HGTP3N60B3D, HGT1S3N60B3DS
Typical Performance Curves Unless Otherwise Specified (Continued)
45
RG = 82Ω, L = 1mH, VCE = 480V
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
30
25
20
15
10
1
TJ = 25oC, TJ = 150oC, VGE = 15V
2345678
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
RG = 82Ω, L = 1mH, VCE = 480V
70
60
TJ = 25oC AND TJ = 150oC, VGE = 10V
50
40
TJ = 25oC, TJ = 150oC, VGE = 15V
30
20
10
12345678
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 82Ω, L = 1mH, VCE = 480V
225
TJ = 150oC, VGE = 15V
200
175
TJ = 150oC, VGE = 10V
150
125 TJ = 25oC, VGE = 15V
100
TJ = 25oC, VGE = 10V
75
1234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
8
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 82Ω, L = 1mH, VCE = 480V
120
TJ = 150oC, VGE = 10V OR 15V
100
80
TJ = 25oC, VGE = 10V OR 15V
60
1234567
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
8
30
PULSE DURATION = 250µs
TC = 25oC
25
TC = -55oC
20
15
TC = 150oC
10
5
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
IG(REF) = 1mA,
RL = 171Ω, TC = 25oC
12
9
6 VCE = 200V VCE = 400V VCE = 600V
3
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
25
5
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| PDF Descargar | [ Datasheet HGTP3N60B3D.PDF ] | |
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