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PDF A5888 Data sheet ( Hoja de datos )
| Número de pieza | A5888 | |
| Descripción | Silicon PNP Transistor | |
| Fabricantes | ETC | |
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A5888
Silicon PNP transistor epitaxial type
A5888
[ Applications ]
Charging circuits, DC-DC converters, MOSFET gate drivers
Motor control, Power switches
[ Feature ]
Very low collector saturation voltage VCE(sat)= -60mV (Max.) at IC= -1A, IB= -0.1A
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-40
Emitter-base voltage
VEBO
-7.5
Collector current (DC)
IC -5.5
Collector current (Pulse)
IC -15
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit
V
V
V
A
A
C
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCES
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Collector cut-off current
ICES
Emitter cut-off current
IEBO
DC current gain 1
hFE 1
DC current gain 2
hFE 2
DC current gain 3
hFE 3
DC current gain 4
hFE 4
Collector-emitter saturation voltage 1 VCE(sat) 1
Collector-emitter saturation voltage 2 VCE(sat) 2
Collector-emitter saturation voltage 3 VCE(sat) 3
Collector-emitter saturation voltage 4 VCE(sat) 4
Collector-emitter saturation voltage 5 VCE(sat) 5
Collector-emitter saturation voltage 6 VCE(sat) 6
Collector-emitter saturation voltage 7 VCE(sat) 7
Collector-emitter saturation voltage 8 VCE(sat) 8
Base-emitter saturation voltage 1 VBE(sat) 1
Base-emitter saturation voltage 2 VBE(sat) 2
Base-emitter on voltage 1
VBE(on) 1
Base-emitter on voltage 2
VBE(on) 2
Transition frequency
fT
Collector output capacitance
Cob
Turn on time 1
ton 1
Turn off time 1
toff 1
Turn on time 2
ton 2
Turn off time 2
toff 2
Min.
-50
-50
-40
-7.5
-
-
-
200
200
170
110
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
Conditions
- - V IC= -100uA, IE= 0A
- - V IC= -100uA
- - V IC= -10mA, IB= 0A
- - V IE= -100uA, IC= 0A
- -20 nA VCB= -40V, IE= 0A
- -20 nA VCES= -32V
- -20 nA VEB= -6V, IC= 0A
- - - VCE= -2V, IC= -10mA
- 550 - VCE= -2V, IC= -0.5A
- - - VCE= -2V, IC= -2A
- - - VCE= -2V, IC= -5.5A
- -30 mV IC= -0.1A, IB= -10mA
- -60 mV IC= -1A, IB= -100mA
- -70 mV IC= -1A, IB= -50mA
- -165 mV IC= -1A, IB= -10mA
- -80 mV IC= -2A, IB= -200mA
- -175 mV IC= -2A, IB= -40mA
- -175 mV IC= -3.5A, IB= -175mA
- -185 mV IC= -5.5A, IB= -550mA
- -0.9 V IC= -2A, IB= -40mA
- -1.075 V IC= -5.5A, IB= -550mA
-
-0.85
V VCE= -2V, IC= -2A
-
-0.95
V VCE= -2V, IC= -5.5A
152 - MHz VCE= -10V, IE= 50mA
53 - pF VCB= -10V, f = 1MHz, IE= 0A
35 - ns VCC= -10V, IC= -1A
385 -
ns -IB1= IB2= -100mA
162 -
ns VCC= -30V, IC= -2A
367 -
ns -IB1= IB2= -20mA
Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only.
Notice 2) The contents described herein are subject to change without notice.
No. A5888-20080825
PHENITEC SEMICONDUCTOR Corp.
- 1/2 -
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