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HGTP5N120CN PDF даташит

Спецификация HGTP5N120CN изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «25A/ 1200V/ NPT Series N-Channel IGBT».

Детали детали

Номер произв HGTP5N120CN
Описание 25A/ 1200V/ NPT Series N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTP5N120CN Даташит, Описание, Даташиты
Data Sheet
HGTP5N120CN, HGT1S5N120CNS
January 2000 File Number 4596.2
25A, 1200V, NPT Series N-Channel IGBT
The HGTP5N120CN and HGT1S5N120CNS are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49309.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP5N120CN
TO-220AB
G5N120CN
HGT1S5N120CNS
TO-263AB
G5N120CN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNS9A.
Symbol
C
G
E
Features
• 25A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
EC
G
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,417,385
4,605,948
4,430,792
4,620,211
4,443,931
4,631,564
4,466,176
4,639,754
4,516,143
4,639,762
4,532,534
4,641,162
4,587,713
4,644,637
4,682,195
4,803,533
4,888,627
4,684,413
4,809,045
4,890,143
4,694,313
4,809,047
4,901,127
4,717,679
4,810,665
4,904,609
4,743,952
4,823,176
4,933,740
4,783,690
4,837,606
4,963,951
4,794,432
4,860,080
4,969,027
4,801,986
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.









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HGTP5N120CN Даташит, Описание, Даташиты
HGTP5N120CN, HGT1S5N120CNS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTP5N120CN
HGT1S5N120CNS
1200
25
12
40
±20
±30
30A at 1200V
167
1.33
36
-55 to 150
300
260
8
15
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 125oC
TC = 150oC
IC = 5.5A,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 45µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
IC = 5.5A, VCE = 0.5 BVCES
IC = 5.5A,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
MIN TYP MAX UNITS
1200
-
-
V
15 - - V
- - 250 µA
- 100
-
µA
- - 2 mA
- 2.1 2.4
V
- 2.9 3.5
V
6.0 7.0
-
V
-
-
±250
nA
25 - - A
- 10.6 -
- 45 55
- 60 75
V
nC
nC
2









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HGTP5N120CN Даташит, Описание, Даташиты
HGTP5N120CN, HGT1S5N120CNS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC
ICE = 5.5A
VCE = 0.8 BVCES
VGE = 15V
RG = 25
L = 5mH
Test Circuit (Figure 18)
- 22 30 ns
- 12 16 ns
- 180 250 ns
- 280 350 ns
- 220
-
µJ
Turn-On Energy (Note 3)
EON2
- 400 500 µJ
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 150oC
ICE = 5.5A
VCE = 0.8 BVCES
VGE = 15V
RG = 25
L = 5mH
Test Circuit (Figure 18)
- 640 700 µJ
- 20 25 ns
- 12 16 ns
- 225 300 ns
- 350 400 ns
- 220
-
µJ
Turn-On Energy (Note 3)
EON2
- 1 1.2 mJ
Turn-Off Energy (Note 4)
Thermal Resistance Junction To Case
EOFF
RθJC
- 1 1.1 mJ
-
-
0.75
oC/W
NOTES:
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
25
VGE = 15V
20
15
10
5
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
35
TJ = 150oC, RG = 25, VGE = 15V, L = 200µH
30
25
20
15
10
5
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3










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