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HGTP7N60A4 PDF даташит

Спецификация HGTP7N60A4 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «600V/ SMPS Series N-Channel IGBT».

Детали детали

Номер произв HGTP7N60A4
Описание 600V/ SMPS Series N-Channel IGBT
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HGTP7N60A4 Даташит, Описание, Даташиты
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4,
TM HGTP7N60A4
Data Sheet
June 2000 File Number 4826.2
600V, SMPS Series N-Channel IGBT
The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and
HGTP7N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60A4S
TO-252AA
7N60A4
HGT1S7N60A4S
TO-263AB
7N60A4
HGTG7N60A4
TO-247
7N60A4
HGTP7N60A4
TO-220AB
7N60A4
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel,
e.g., HGTD7N60A4S9A.
Packaging
JEDEC STYLE TO-247
E
C
G
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . .75ns at TJ = 125oC
• Low Conduction Loss
Temperature Compensating SABER™ Model
www.intersil.com
Symbol
C
G
E
JEDEC TO-220AB
EC
G
COLLECTOR
(FLANGE)
JEDEC TO-252AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
2-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc. | 1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000









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HGTP7N60A4 Даташит, Описание, Даташиты
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Single Pulse Avalanche Energy at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
ALL TYPES
600
34
14
56
±20
±30
35A at 600V
25mJ at 7A
125
1.0
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
EAS
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 250µA, VGE = 0V
IC = 10mA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 7A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 25Ω, VGE = 15V
L = 100µH, VCE = 600V
ICE = 7A, L = 500µH
IC = 7A, VCE = 300V
IC = 7A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 7A
VCE = 390V
VGE = 15V
RG = 25
L = 1mH
Test Circuit (Figure 20)
MIN TYP MAX UNITS
600 - - V
20 - - V
- - 250 µA
- - 2 mA
- 1.9 2.7
V
- 1.6 2.2
V
4.5 5.9
7.0
V
-
-
±250
nA
35 - - A
25 -
-
- 9.0
-
- 37 45
- 48 60
- 11
-
- 11
-
- 100
-
- 45
-
- 55
-
- 120 150
- 60 75
mJ
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
2-2









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HGTP7N60A4 Даташит, Описание, Даташиты
HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 125oC
ICE = 7A
VCE = 390V
VGE = 15V
RG = 25
L = 1mH
Test Circuit (Figure 20)
- 10
-
ns
- 7 - ns
- 130 150 ns
- 75 85 ns
- 50
-
µJ
Turn-On Energy (Note 2)
EON2
- 200 215 µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
- 125 170 µJ
- - 1.0 oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
35
VGE = 15V
40
TJ = 150oC, RG = 25, VGE = 15V, L = 100µH
30
30
25
20
20
15
10
10
5
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
150
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
TC VGE
75oC 15V
200
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.0oC/W, SEE NOTES
TJ = 125oC, RG = 25, L = 2mH, VCE = 390V
30
1 5 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16 VCE = 390V, RG = 25, TJ = 125oC 140
14 120
12 ISC 100
10 80
8 60
6 tSC 40
4 20
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
2-3










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