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HI-222 PDF даташит

Спецификация HI-222 изготовлена ​​​​«Intersil Corporation» и имеет функцию, называемую «High Frequency/Video Switch».

Детали детали

Номер произв HI-222
Описание High Frequency/Video Switch
Производители Intersil Corporation
логотип Intersil Corporation логотип 

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HI-222 Даташит, Описание, Даташиты
May 1999
POSSOIBBLSEOSLUHEBIT-S2E2TP2ITR/8UO8T3DEUPCRTODUCT
HI-222
High Frequency/Video Switch
[ /Title
(HI-
222)
/Sub-
ject
(High
Fre-
quency/
Video
Switch)
/Author
()
/Key-
words
Features
• Wideband Operation . . . . . . . . . . . . . . . . . . . . . 200MHz
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 0.03%
• Differential Phase . . . . . . . . . . . . . . . . . . 0.003 Degrees
• Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . 100ns
• rON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
• Off Isolation at 10MHz . . . . . . . . . . . . . . . . . . . . . -65dB
• Crosstalk at 10MHz . . . . . . . . . . . . . . . . . . . . . . . . -80dB
Applications
• Routing Switchers
• Production Mixers
• High Definition TV
• Radar Signal Conditioning
• Medical Imaging
• Heads-Up Displays
• Simulators
• Sonar
Related Literature
• HI-222/883 Data Sheet in 1989 Military Analog Data Book
Description
The HI-222 is a high frequency analog switch that
complements the Harris family of high speed op amps and
buffers. Fabricated with our Dielectric Isolation process and
using silicon gate technology, many key parameters have
been enhanced.
Crosstalk and off isolation are optimized with a T-switch
configuration and the use of nonconnected pins for extended
shielding. Other features of the HI-222 include wideband
operation, low rON, fast switching speeds and low differential
gain and phase. The characteristics of this TTL compatible
device make it ideal for designs where improved switching
performance is required.
The primary application of this dual SPST switch is the
routing of high frequency signals in equipment ranging from
video production mixers to military RF circuits.
For specifications on HI-222/883, refer to Harris Military
Analog Data book.
Pinouts
HI-222 (CERDIP, PDIP) (LOGIC “1” INPUT)
TOP VIEW
NC 1
VIN1 2
GND 3
V+ 4
NC 5
VIN2 6
NC 7
14 VOUT1
13 NC
12 VA1
11 V-
10 VA2
9 NC
8 VOUT2
Part Number Information
PART NUMBER
HI4P0222-5
HI1-0222-5
HI3-0222-5
TEMP.
RANGE (oC)
PACKAGE
0 to 75 20 Ld PLCC
0 to 75 14 Ld CERDIP
0 to 75 14 Ld PDIP
Functional Diagram
V+
PKG.
NO.
N20.35
F14.3
E14.3
HI-222 (CLCC/PLCC) (LOGIC “0” INPUT)
TOP VIEW
IN
OUT
3 2 1 20 19
GND 4
NC 5
V+ 6
NC 7
NC 8
18 VA1
17 NC
16 V-
15 NC
14 VA2
9 10 11 12 13
V-
Q
LEVEL SHIFTER AND
Q DRIVER
LOGIC INPUT
V+
V-
NOTE: Source and Drain are arbitrarily depicted as Analog Input and Output, respectively. They may be interchanged without affecting
performance. All nonconnected pins should be tied to ground.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1997
1
File Number 3124.2









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HI-222 Даташит, Описание, Даташиты
HI-222
Absolute Maximum Ratings TA = 25oC
Supply Voltage (V+ to V-) (Terminals). . . . . . . . . . . . . . . . . . . . . 36V
±VS to Ground (V+ to V-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V
Digital Analog Input Voltage (VA, VS, VD) . . . . . . . . . . . . . ±VS ±2V
IPEAK (S to D) (Pulse at 0.8ms, 10% Duty Cycle Max) . . . . . 100mA
IPEAK (Any Pin, 50% Duty Cycle). . . . . . . . . . . . . . . . . . . . . . . 28mA
Continuous Current (Any Pin). . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Operating Conditions
Temperature Range, HI-222-5 . . . . . . . . . . . . . . . . . . . .0oC to 75oC
Thermal Information
Thermal Resistance (Typical, Note 1)
θJA (oC/W) θJC (oC/W)
CERDIP Package . . . . . . . . . . . . . . . .
80
30
CLCC Package . . . . . . . . . . . . . . . . . .
70
18
PDIP Package . . . . . . . . . . . . . . . . . . .
90
N/A
PLCC Package . . . . . . . . . . . . . . . . . .
75
N/A
Maximum Junction Temperature (Hermetic Package) . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(PLCC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications ±VS = ±15V, VAH = 2.0V, VAL = 0.8V, Unless Otherwise Specified
PARAMETER
ANALOG SWITCH CHARACTERISTICS
VS, Analog Signal Range
rON, ON Resistance (Note 2)
ISOFF Leakage
IDOFF Leakage
IDON Leakage
DIGITAL INPUT CHARACTERISTICS
VAL, Low Threshold
VAH, High Threshold
IAL, Low Level Leakage
IAH, High Level Leakage
SWITCHING CHARACTERISTICS
tON (Note 3)
tOFF (Note 3)
Off-Isolation at 10MHz (Note 4)
Crosstalk at 10MHz (Note 4)
Differential Gain (Note 5)
Differential Phase (Note 5)
TEMP (oC) MIN
Full -15
25 -
Full -
25 -
Full -
25 -
Full -
25 -
Full -
Full -
Full 2.0
25 -
Full -
25 -
Full -
25 -
25 -
25 -
25 -
25 -
25 -
HI-222-5
TYP MAX
- +15
35 50
- 75
0.1 2.5
- 200
0.1 2.5
- 200
0.3 2.5
- 200
- 0.8
--
0.1 1.0
- 1.0
0.1 1.0
- 1.0
100
70
-65
-80
0.03
0.003
200
200
-
-
-
-
UNITS
V
nA
nA
nA
nA
A
nA
V
V
µA
µA
µA
µA
ns
ns
dB
dB
%
De-
grees
2









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HI-222 Даташит, Описание, Даташиты
HI-222
Electrical Specifications ±VS = ±15V, VAH = 2.0V, VAL = 0.8V, Unless Otherwise Specified (Continued)
PARAMETER
TEMP (oC)
HI-222-5
MIN TYP MAX
UNITS
Gain Tolerance At 1MHz (Note 6)
25
- 0.05 -
dB
At 8MHz
25
- 0.15 -
dB
Bandwidth (Note 6)
25 - 200 - MHz
CS(OFF), Switch Input Capacitance
CD(OFF), Switch Output Capacitance
CD(ON), Switch Output Capacitance
CA(ON), Switch Output Capacitance
CDS(OFF), Drain-to-Source Capacitance
POWER REQUIREMENTS
25 - 12 - pF
25 - 28 - pF
25 - 83 - pF
25 - 5 - pF
25 - 0.2 - pF
1± at ±15V Quiescent Current
25 - 2.5 4.0 mA
Full - - 6.0 mA
PD, Quiescent Power Dissipation
25 - 75 120 mW
Full - - 180 mW
NOTES:
2. As with all semiconductors, stresses listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting
in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. The conditions listed under “Electrical Specifications” are the only conditions recommended for satisfactory operation.
3. VOUT = ±5V, IOUT - 7.5mA.
4. VIN = +5V, RL = 2k, CL = 40pF. VA levels are 0.0V to 3.0V for switch under test. Switch not under test has VA = 4.0V.
5. VIN = 300mVP-P, RL = 50, VAH = +2.0V, VAL = 0.8, f = 10MHz.
6. VIN = 300mVP-P, VOFFSET = 1.0, f = 3.58MHz and 4.43MHz, VAL = 0.V, RL = 2k.
7. VIN = 300mVP-P RL = 50, VAL = 0.8V.
Test Circuits
SWITCH INPUT
VIN = +5
LOGIC
INPUT
V+ = +15V
2
VA 12
4
14
3 11
VOUT
RL CL
2K 35pF
VO
=
VIN
----------R----L-----------
RL + rON
CLIncludes CFIXTURE + CPROBE
GND
V- = -15V
FIGURE 1. SWITCHING TEST CIRCUIT (tON, tOFF1)
3










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Номер в каталогеОписаниеПроизводители
HI-222High Frequency/Video SwitchIntersil Corporation
Intersil Corporation

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