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AP72T02GJ-HF Datasheet Download - Advanced Power Electronics

Номер произв AP72T02GJ-HF
Описание N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 


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AP72T02GJ-HF Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP72T02GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
25V
9m
62A
GD
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T02GJ)
are available for low-profile applications.
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
25
+ 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
.
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62.5
110
Units
/W
/W
/W
Data and specifications subject to change without notice
1
201501299







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AP72T02GJ-HF Даташит, Описание, Даташиты
AP72T02GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=4.5V, ID=15A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=25V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=20V ,VGS=0V
Gate-Source Leakage
VGS= +20V, VDS=0V
Total Gate Charge
ID=30A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
VGS=4.5V
Turn-on Delay Time
VDS=15V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.5
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
25 - - V
- 0.02 - V/
- 8 9 m
- 11 15 m
1 - 3V
- 42 -
S
- - 1 uA
- - 250 uA
- - +100 nA
- 13 21 nC
- 2.7 - nC
- 9 - nC
- 8 - ns
- 80 - ns
- 22 - ns
- 6 - ns
- 930 1490 pF
- 250 - pF
- 180 - pF
- 1.1 1.7
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=15A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 26 - ns
- 15 - nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25, IAS=24A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2







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AP72T02GJ-HF Даташит, Описание, Даташиты
180
10V
T C =25 o C
7.0V
120
5.0V
4.5V
60
V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
35
I D =15A
T C =25 o C
25
15
5
2468
VGS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T j =175 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP72T02GH/J-HF
120
T C =175 o C
10V
7.0V
5.0V
80
4.5V
40
V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =30A
V G =10V
1.4
1
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
200
1.2
0.6
0.0
-50
0 50 100 150
T j , Junction Temperature ( o C )
200
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3








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