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даташит 5N52U PDF ( Datasheet )

5N52U Datasheet Download - STMicroelectronics

Номер произв 5N52U
Описание STD5N52U
Производители STMicroelectronics
логотип STMicroelectronics логотип 


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5N52U Даташит, Описание, Даташиты
STD5N52U,
STF5N52U
N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™
Power MOSFETs in DPAK and TO-220FP packages
Datasheet - production data
Features
TAB
3
1
DPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2, TAB)
Order codes VDS RDS(on) max ID PTOT
STD5N52U
STF5N52U
525 V
1.5 Ω
70 W
4.4 A
25 W
Outstanding dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very low RDS(on)
Extremely low trr
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
G(1) developed using UltraFASTmesh™ technology,
which combines the advantages of reduced on-
resistance, Zener gate protection and very high
dv/dt capability with an enhanced fast body-drain
recovery diode.
S(3)
AM01476v1
Order codes
STD5N52U
STF5N52U
Table 1. Device summary
Marking
Package
5N52U
DPAK
TO-220FP
Packaging
Tape and reel
Tube
April 2014
This is information on a product in full production.
DocID15684 Rev 3
1/19
www.st.com







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5N52U Даташит, Описание, Даташиты
Contents
Contents
STD5N52U, STF5N52U
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 DPAK, STD5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-220FP, STF5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 DocID15684 Rev 3







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5N52U Даташит, Описание, Даташиты
STD5N52U, STF5N52U
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
DPAK
Value
TO-220FP
VGS
ID
ID
(1)
IDM
PTOT
IAR
EAS
(2)
dv/dt
ESD
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
Gate-source human body model (R = 1.5 kΩ,
C = 100 pF)
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area.
2. ISD 4.4 A, di/dt 400 A/μs, peak VDS V(BR)DSS
± 30
4.4
2.8
17.6
70 25
4.4
170
20
2.8
2500
-55 to 150
Unit
V
A
A
A
W
A
mJ
V/ns
kV
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
DPAK
Value
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
(1)
Rthj-pcb Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4 board, 2oz Cu
1.79
50
5
62.5
Unit
°C/W
°C/W
°C/W
DocID15684 Rev 3
3/19
19








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