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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2650
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Switching regulator applicaition.
·High voltage switching application.
·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150 ℃
-55~150
℃
isc Website：www.iscsemi.cn
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No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2650
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
ICBO Collector Cutoff Current
VCB= 400V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 7V ; IC= 0
hFE DC Current Gain
IC= 5A ; VCE= 5V
Switching Times
tr Rise Time
tstg Storage Time
tf Fall Time
IC= 5A; IB1= -IB2= 0.5A;
RL= 40Ω; VCC= 200V;
Duty Cycle≤1%
MIN TYP. MAX UNIT
500 V
400 V
7V
1.5 V
2.0 V
100 μA
1 mA
10
1.0 μs
2.5 μs
1.0 μs
isc Website：www.iscsemi.cn
2
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