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45H11 Datasheet Download - ON Semiconductor

Номер произв 45H11
Описание MJD45H11
Производители ON Semiconductor
логотип ON Semiconductor логотип 


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45H11 Даташит, Описание, Даташиты
MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Pb−Free Packages are Available
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation* @ TA = 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
VCEO
VEB
IC
PD
PD
TJ, Tstg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
71.4 °C/W
Lead Temperature for Soldering
TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
http://onsemi.com
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
12
3
4
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
1
2
3
4
DPAK−3
CASE 369D
STYLE 1
Y = Year
WW = Work Week
x = 4 or 5
YWW
J4
xH11
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 6
1
Publication Order Number:
MJD44H11/D
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45H11 Даташит, Описание, Даташиты
MJD44H11 (NPN) MJD45H11 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 mA, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCEO, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
(VEB = 5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8 Adc, IB = 0.4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 8 Adc, IB = 0.8 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 1 Vdc, IC = 2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(VCE = 1 Vdc, IC = 4 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, ftest = 1 MHz)
MJD44H11
MJD45H11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎGain Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
MJD44H11
MJD45H11
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING TIMES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay and Rise Times
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =5Adc,IB1 =0.5Adc)
MJD44H11
MJD45H11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)
MJD44H11
MJD45H11
Symbol Min Typ Max Unit
VCEO(sus)
80
Vdc
ICES
− − 10 mA
IEBO
− − 50 mA
VCE(sat) − − 1 Vdc
VBE(sat) − − 1.5 Vdc
hFE
60 −
40 −
Ccb
fT
td + tr
ts
tf
− 130 −
− 230 −
− 50 −
− 40 −
pF
MHz
− 300 −
− 135 −
− 500 −
− 500 −
− 140 −
− 100 −
ns
ns
ns
http://onsemi.com
2
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45H11 Даташит, Описание, Даташиты
MJD44H11 (NPN) MJD45H11 (PNP)
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MJD44H11
DPAK
369C
75 Units / Rail
MJD44H11−001
DPAK−3
369D
75 Units / Rail
MJD44H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD44H11RL
DPAK
369C
1800 Tape & Reel
MJD44H11T4
DPAK
369C
2500 Tape & Reel
MJD44H11T4G
DPAK
(Pb−Free)
369C
2500 Tape & Reel
MJD44H11T5
DPAK
369C
2500 Tape & Reel
MJD45H11
DPAK
369C
75 Units / Rail
MJD45H11−001
DPAK−3
369D
75 Units / Rail
MJD45H11G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD45H11RL
DPAK
369C
1800 Tape & Reel
MJD45H11T4
DPAK
369C
2500 Tape & Reel
MJD45H11T4G
DPAK
(Pb−Free)
369C
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
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