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25N60N Datasheet Download - Fairchild Semiconductor

Номер произв 25N60N
Описание FCH25N60N
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 


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25N60N Даташит, Описание, Даташиты
FCH25N60N
N-Channel SupreMOS® MOSFET
600 V, 25 A, 126 mΩ
December 2013
Features
• RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D
G
D
S
TO-247
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FCH25N60N
600
±30
25
16
75
861
8.3
2.2
100
20
216
1.72
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2011 Fairchild Semiconductor Corporation
FCH25N60N Rev. C1
1
FCH25N60N
0.58
40
Unit
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/







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25N60N Даташит, Описание, Даташиты
Package Marking and Ordering Information
Part Number
FCH25N60N
Top Mark
FCH25N60N
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 1 mA, VGS = 0 V,TJ = 25oC
ID = 1 mA, Referenced to 25oC
VDS = 480 V, VGS = 0 V
VDS = 480 V, TJ = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain to Source On Resistance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 12.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 12.5 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
600
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 12.5 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 12.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 12.5 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 8.3 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 25 A, di/dt 200 A/μs, VDD 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note 4)
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
0.74
-
-
-
-
-
10
100
±100
V
V/oC
μA
nA
-
0.108
4.0
0.126
V
Ω
2520
103
3.2
55
262
57
10
18
1
3352
137
5
-
-
74
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
21 52 ns
22 54 ns
68 146 ns
5 20 ns
- 25 A
- 75 A
- 1.2 V
370 - ns
7 - μC
©2011 Fairchild Semiconductor Corporation
FCH25N60N Rev. C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/







No Preview Available !

25N60N Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 15V
10V
8V
6V
4V
10
1 *Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.3
0.05 0.1 1 10
VDS, Drain-Source Voltage[V]
30
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
300
250
200
VGS = 10V
150
100
0
VGS = 20V
*Note: TC = 25oC
20 40 60
ID, Drain Current [A]
80
Figure 5. Capacitance Characteristics
105
Coss
104
Ciss
103
Crss
102 *Note:
1. VGS = 0V
2. f = 1MHz
101 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
100 Crss = Cgd
0.1 1
10 100
VDS, Drain-Source Voltage [V]
600
Figure 2. Transfer Characteristics
100
25oC
10
150oC
-55oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
2468
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8 VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 12.5A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FCH25N60N Rev. C1
3
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/








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