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HEF4023B PDF даташит

Спецификация HEF4023B изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Triple 3-input NAND gate».

Детали детали

Номер произв HEF4023B
Описание Triple 3-input NAND gate
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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HEF4023B Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4023B
gates
Triple 3-input NAND gate
Product specification
File under Integrated Circuits, IC04
January 1995









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HEF4023B Даташит, Описание, Даташиты
Philips Semiconductors
Triple 3-input NAND gate
DESCRIPTION
The HEF4023B provides the positive triple 3-input NAND
function. The outputs are fully buffered for highest noise
immunity and pattern insensitivity of output impedance.
Product specification
HEF4023B
gates
Fig.1 Functional diagram.
Fig.3 Logic diagram (one gate).
FAMILY DATA, IDD LIMITS category GATES
See Family Specifications
Fig.2 Pinning diagram.
HEF4023BP(N): 14-lead DIL; plastic
(SOT27-1)
HEF4023BD(F): 14-lead DIL; ceramic (cerdip)
(SOT73)
HEF4023BT(D): 14-lead SO; plastic
(SOT108-1)
( ): Package Designator North America
January 1995
2









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HEF4023B Даташит, Описание, Даташиты
Philips Semiconductors
Triple 3-input NAND gate
Product specification
HEF4023B
gates
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns
VDD
V
SYMBOL
TYP. MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
In On
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
LOW to HIGH
5
10 tPHL
15
5
10 tPLH
15
5
10 tTHL
15
5
10 tTLH
15
65 135 ns 38 ns + (0,55 ns/pF) CL
25
50 ns
14 ns + (0,23 ns/pF) CL
15 30 ns 7 ns + (0,16 ns/pF) CL
65 130 ns 38 ns + (0,55 ns/pF) CL
30
60 ns
19 ns + (0,23 ns/pF) CL
25
45 ns
17 ns + (0,16 ns/pF) CL
60 120 ns 10 ns + (1,0 ns/pF) CL
30 60 ns 9 ns + (0,42 ns/pF) CL
20 40 ns 6 ns + (0,28 ns/pF) CL
60 120 ns 10 ns + (1,0 ns/pF) CL
30 60 ns 9 ns + (0,42 ns/pF) CL
20 40 ns 6 ns + (0,28 ns/pF) CL
Dynamic power
dissipation per
package (P)
VDD
V
TYPICAL FORMULA FOR P (µW)
5
1200 fi + ∑ (foCL) × VDD2
where
10
5500 fi + ∑ (foCL) × VDD2
fi = input freq. (MHz)
15
16 400 fi + ∑ (foCL) × VDD2
fo = output freq. (MHz)
CL = load capacitance (pF)
(foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
3










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Номер в каталогеОписаниеПроизводители
HEF4023BTriple 3-input NAND gateNXP Semiconductors
NXP Semiconductors

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