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HEF4720B PDF даташит

Спецификация HEF4720B изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «256-bit/ 1-bit per word random access memories».

Детали детали

Номер произв HEF4720B
Описание 256-bit/ 1-bit per word random access memories
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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HEF4720B Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4720B
HEF4720V
LSI
256-bit, 1-bit per word random
access memories
Product specification
File under Integrated Circuits, IC04
January 1995









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HEF4720B Даташит, Описание, Даташиты
Philips Semiconductors
256-bit, 1-bit per word random access memories
Product specification
HEF4720B
HEF4720V
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word
random access memories with 3-state outputs. The
memories are fully decoded and completely static.
Recommended supply voltage range for HEF4720B is 3 to
15 V and for HEF4720V is 4,5 to 12,5 V; minimum
stand-by voltage for both types is 3 V.
The use of LOCMOS gives the added advantage of very
low stand-by power. The circuits can be directly interfaced
with standard bipolar devices (TTL) without using special
interface circuits. The memory operates from a single
power supply. The separate chip select input (CS) allows
simple memory expansion when the outputs are wire-O
Red. If CS is HIGH, the outputs are floating and no new
information can be written into the memory. The signal at
O has the same polarity as the data input D, while the
signal at O is the complement of the signal at O. The write
control W must be HIGH for writing into the memory.
Fig.1 Functional diagram.
Fig.2 Pinning diagram.
January 1995
HEF4720BP; HEF4720VP(N): 16-lead DIL; plastic
(SOT38-1)
HEF4720BD; HEF4720VD(F): 16-lead DIL; ceramic
(cerdip) (SOT74)
HEF4720BT; HEF4720VT(D): 16-lead SO; plastic
(SOT109-1)
( ): Package Designator North America
FAMILY DATA
See Family Specifications.
2









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HEF4720B Даташит, Описание, Даташиты
Philips Semiconductors
256-bit, 1-bit per word random access memories
Product specification
HEF4720B
HEF4720V
IDD LIMITS
See below.
FUNCTION TABLE
CS W
LH
LL
HX
O
data written
into memory
data written
into memory
Z
O MODE
complement of data write
written into memory
complement of data read
written into memory
Z inhibit
Notes
1. H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
X = state is immaterial
Z = high impedance OFF-state
PINNING
CS
W
D
A0 to A7
O
O
chip select input (active LOW)
write enable input
data input
address inputs
3-state output (active HIGH)
3-state output (active LOW)
SUPPLY VOLTAGE
HEF4720B
HEF4720V
RATING
0,5 to 18
0,5 to 18
RECOMMENDED OPERATING
3,0 to 15,0
4,5 to 12,5
The values given at VDD = 15 V in the following DC and
AC characteristics, are not applicable to the HEF4720V,
because of its lower supply voltage range.
STAND-BY MIN.
3
3
V
V
DC CHARACTERISTICS
VSS = 0 V
Output current
LOW
Quiescent device
current
Input leakage current
HEF4720V
HEF4720B
VDD
V
VOL
V
SYMBOL
40
Tamb (°C)
+25
+85
MIN. MAX. MIN. MAX. MIN. MAX.
4,75 0,4
2,4 2 1,6 mA
10 0,5 IOL
15 1,5
4,8
10,0
4 3,2 mA
10 7,5 mA
5
10 IDD
15
25 25
50 50
100 100
200 µA
400 µA
800 µA
10
15 ±IIN
0,3 0,3
0,3 0,3
1 µA
1 µA
January 1995
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Номер в каталогеОписаниеПроизводители
HEF4720B256-bit/ 1-bit per word random access memoriesNXP Semiconductors
NXP Semiconductors
HEF4720V256-bit/ 1-bit per word random access memoriesNXP Semiconductors
NXP Semiconductors

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