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Número de pieza | HEF4720V | |
Descripción | 256-bit/ 1-bit per word random access memories | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4720B
HEF4720V
LSI
256-bit, 1-bit per word random
access memories
Product specification
File under Integrated Circuits, IC04
January 1995
1 page Philips Semiconductors
256-bit, 1-bit per word random access memories
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL MIN. TYP.
Write cycle
Write cycle time
Address to write
set-up time
Write pulse width
Write recovery time
Data set-up time
Data hold time
Chip select set-up
time with respect
to write pulse
Chip select hold
time with respect
to write pulse
Chip select lead time
over write pulse to
prevent writing
5
10 tWC
15
5
10 tAW
15
5
10 tWP
15
5
10 tWR
15
5
10 tDW
15
5
10 tDH
15
5
10 tCSW
15
5
10 tCSH
15
5
10 tCSL
15
580
220
160
110
50
50
370
130
80
100
40
30
250
100
80
100
30
20
370
130
80
0
0
0
0
0
0
MAX.
ns
ns
ns
ns
ns
ns
10 000 ns
10 000 ns
10 000 ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Product specification
HEF4720B
HEF4720V
January 1995
5
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Fig.7 Using extra HEF4720B; V ICs to obtain more words.
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet HEF4720V.PDF ] |
Número de pieza | Descripción | Fabricantes |
HEF4720B | 256-bit/ 1-bit per word random access memories | NXP Semiconductors |
HEF4720V | 256-bit/ 1-bit per word random access memories | NXP Semiconductors |
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