CCS050M12CM2 PDF даташит
Спецификация CCS050M12CM2 изготовлена «Cree» и имеет функцию, называемую «50A Silicon Carbide Six-Pack (Three Phase) Module». |
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Детали детали
Номер произв | CCS050M12CM2 |
Описание | 50A Silicon Carbide Six-Pack (Three Phase) Module |
Производители | Cree |
логотип |
9 Pages
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CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 25 mΩ
EOFF (TJ = 150˚C)
0.6 mJ
Features
• Ultra Low Loss
• Zero Reverse Recovery Current
• Zero Turn-off Tail Current
• High-Frequency Operation
•
•
Positive Temperature Coefficient
Cu Baseplate, AlN DBC
on
VF
and
VDS(on)
System Benefits
• Enables Compact and Lightweight Systems
• High Efficiency Operation
• Ease of Transistor Gate Control
• Reduced Cooling Requirements
• Reduced System Cost
Applications
•
•
•
•
•
•
Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Package
Part Number
CCS050M12CM2
Package
Six-Pack
Marking
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS Drain - Source Voltage
VGS Gate - Source Voltage
ID Continuous Drain Current
ID(pulse)
TJ
TC ,TSTG
Visol
LStray
M
G
PD
Pulsed Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
Power Dissipation
1.2
+25/-10
87
59
250
150
kV
V
A VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
A PRualtseeliwmidittehdtbP y=T2jm5a0x,TμCs= 25˚C
˚C
-40 to +125
2.5
˚C
kV DC, t = 1 min
30 nH Measured from pins 25-26 to 27-28
5.0 N-m
180 g
312
W TC = 25 ˚C, TJ ≤ 150 ˚C
Fig. 26
Fig. 28
Fig. 27
Subject to change without notice.
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Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
V(BR)DSS
VGS(th)
Drain - Source Breakdown Voltage
Gate Threshold Voltage
1.2
2.3
1.6
kV
V
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On State Resistance
2 100 μA
0.5 μA
25 34
mΩ
43 63
gfs Transconductance
22
S
21
Ciss Input Capacitance
2.810
Coss Output Capacitance
0.393
nF
Crss Reverse Transfer Capacitance
Eon T u r n - O n S w i t c h in g E n e r g y
0.014
1.1
mJ
EOff T u r n - O f f S w it c h in g E n e r g y
0.6 mJ
RG (int)
QGS
QGD
QG
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
1.5 Ω
32
30 nC
180
td(on)
Turn-on delay time
21 ns
tr(on)
td(off)
tf(off)
VSD fall time 90% to 10%
Turn-off delay time
VSD rise time 10% to 90%
30 ns
50 ns
19 ns
Free-Wheeling SiC Schottky Diode Characteristics
Test Conditions
VGS, = 0 V, ID = 100 µA
VDS = 10 V, ID = 2.5 mA
VDS = 10 V, ID = 2.5 mA, TJ = 150 ˚C
VDS = 1.2 kV, VGS = 0V
VGS = 20 V, VDS = 0V
VGS = 20 V, IDS = 50 A
VGS = 20 V, IDS = 50 A, TJ = 150 ˚C
VDS = 20 V, IDS = 50 A
VDS = 20 V, ID = 50 A, TJ = 150 ˚C
VDS = 800 V, VGS = 0 V
f = 1 MHz, VAC = 25 mV
VDD = 600 V, VGS = +20V/-5V
ID = 50 A, RG = 20 Ω
Load = 200 μH TJ = 150 ˚C
Note: IEC 60747-8-4 Definitions
f = 1 MHz, VAC = 25 mV
VDD= 800 V, ID= 50 A
VDD = 800V, RLOAD = 8 Ω
VGS = +20/-2V, RG = 3.8 Ω
TJ = 25 ˚C
Note: IEC 60747-8-4 Definitions
Note
Fig.
4-7
Fig. 8
Fig.
16,17
Fig. 18
Fig. 15
Fig.
20-25
Symbol
Parameter
VSD Diode Forward Voltage
QC Total Capacitive Charge
IF Continuous Forward Current
Min.
Typ.
1.5
2.0
0.28
50
Max.
1.7
2.3
Unit
Test Conditions
V IF = 50 A, VGS = 0
IF = 50 A, TJ = 150 ˚C
μC
A VGS = -5 V, Tc = 90 ˚C
Note
Fig. 9
Thermal Characteristics
Symbol
RthJCM
RthJCD
Parameter
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Min.
NTC Characteristics
Symbol
Condition
R25
Delta R/R
P25
B25/50
B25/80
TC = 25 °C
TC = 100 °C, R100 = 481 Ω
TC = 25 °C
R2 = R25 exp[B25/50(1/T2-1/(298.15K))]
R2 = R25 exp[B25/80(1/T2-1/(298.15K))]
Typ.
0.37
0.42
Max.
0.40
0.43
Unit
˚C/W
Test Conditions
Tc = 90 ˚C, PD = 150 W
Tc = 90 ˚C, PD = 130 W
Note
Typ.
5
3380
3440
Max.
±5
Unit
kΩ
%
mW
K
K
2 CCS050M12CM2,Rev. B
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Typical Performance
200
Conditions:
TJ = -40 °C
tp < 50 µs
160
VGS = 20 V
VGS = 15 V
200
Conditions:
TJ = 25 °C
tp < 50 µs
160
VGS = 20 V
VGS = 15 V
120 120
80
40 VGS = 10 V
VGS = 5 V
0
0 3 6 9 12 15
Drain-Source Voltage, VDS (V)
Figure 1. Typical Output Characteristics TJ = -40 ˚C
80 VGS = 10 V
40
VGS = 5 V
0
0 3 6 9 12 15
Drain-Source Voltage, VDS (V)
Figure 2. Typical Output Characteristics TJ = 25 ˚C
200
Conditions:
TJ = 150 °C
tp < 50 µs
160
120
VGS = 20 V
VGS = 15 V
VGS = 10 V
80
40
0
0
VGS = 5 V
3 6 9 12
Drain-Source Voltage, VDS (V)
15
Figure 3. Typical Output Characteristics TJ = 150 ˚C
60
Conditions:
VGS = 20 V
50 tp < 50 µs
40
TJ = 150 °C
TJ = 125 °C
30
TJ = 25 °C
20 TJ = -40 °C
10
0
0 25 50 75 100
Drain Source Current, IDS (A)
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
3 CCS050M12CM2,Rev. B
2.0
Conditions:
1.8 IDS = 50 A
VGS = 20 V
1.6 tp < 50 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
12
TJ = -40 °C
TJ = 25 °C
Conditions:
IDS = 50 A
tp < 50 µs
TJ = 150 °C
13 14 15 16 17 18 19 20
Gate Source Voltage, VGS (V)
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
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Номер в каталоге | Описание | Производители |
CCS050M12CM2 | 50A Silicon Carbide Six-Pack (Three Phase) Module | Cree |
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