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CCS050M12CM2 PDF даташит

Спецификация CCS050M12CM2 изготовлена ​​​​«Cree» и имеет функцию, называемую «50A Silicon Carbide Six-Pack (Three Phase) Module».

Детали детали

Номер произв CCS050M12CM2
Описание 50A Silicon Carbide Six-Pack (Three Phase) Module
Производители Cree
логотип Cree логотип 

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CCS050M12CM2 Даташит, Описание, Даташиты
CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
VDS 1.2 kV
RDS(on) (TJ = 25˚C) 25 mΩ
EOFF (TJ = 150˚C)
0.6 mJ
Features
Ultra Low Loss
Zero Reverse Recovery Current
Zero Turn-off Tail Current
High-Frequency Operation
Positive Temperature Coefficient
Cu Baseplate, AlN DBC
on
VF
and
VDS(on)
System Benefits
Enables Compact and Lightweight Systems
High Efficiency Operation
Ease of Transistor Gate Control
Reduced Cooling Requirements
Reduced System Cost
Applications
Solar Inverters
UPS and SMPS
Induction Heating
Regen Drives
3-Phase PFC
Motor Drives
Package
Part Number
CCS050M12CM2
Package
Six-Pack
Marking
CCS050M12CM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
Notes
VDS Drain - Source Voltage
VGS Gate - Source Voltage
ID Continuous Drain Current
ID(pulse)
TJ
TC ,TSTG
Visol
LStray
M
G
PD
Pulsed Drain Current
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Mounting Torque
Weight
Power Dissipation
1.2
+25/-10
87
59
250
150
kV
V
A VGS = 20 V, TC = 25 ˚C
VGS = 20 V, TC = 90 ˚C
A PRualtseeliwmidittehdtbP y=T2jm5a0x,TμCs= 25˚C
˚C
-40 to +125
2.5
˚C
kV DC, t = 1 min
30 nH Measured from pins 25-26 to 27-28
5.0 N-m
180 g
312
W TC = 25 ˚C, TJ ≤ 150 ˚C
Fig. 26
Fig. 28
Fig. 27
Subject to change without notice.
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CCS050M12CM2 Даташит, Описание, Даташиты
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
V(BR)DSS
VGS(th)
Drain - Source Breakdown Voltage
Gate Threshold Voltage
1.2
2.3
1.6
kV
V
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On State Resistance
2 100 μA
0.5 μA
25 34
mΩ
43 63
gfs Transconductance
22
S
21
Ciss Input Capacitance
2.810
Coss Output Capacitance
0.393
nF
Crss Reverse Transfer Capacitance
Eon T u r n - O n S w i t c h in g E n e r g y
0.014
1.1
mJ
EOff T u r n - O f f S w it c h in g E n e r g y
0.6 mJ
RG (int)
QGS
QGD
QG
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
1.5
32
30 nC
180
td(on)
Turn-on delay time
21 ns
tr(on)
td(off)
tf(off)
VSD fall time 90% to 10%
Turn-off delay time
VSD rise time 10% to 90%
30 ns
50 ns
19 ns
Free-Wheeling SiC Schottky Diode Characteristics
Test Conditions
VGS, = 0 V, ID = 100 µA
VDS = 10 V, ID = 2.5 mA
VDS = 10 V, ID = 2.5 mA, TJ = 150 ˚C
VDS = 1.2 kV, VGS = 0V
VGS = 20 V, VDS = 0V
VGS = 20 V, IDS = 50 A
VGS = 20 V, IDS = 50 A, TJ = 150 ˚C
VDS = 20 V, IDS = 50 A
VDS = 20 V, ID = 50 A, TJ = 150 ˚C
VDS = 800 V, VGS = 0 V
f = 1 MHz, VAC = 25 mV
VDD = 600 V, VGS = +20V/-5V
ID = 50 A, RG = 20 Ω
Load = 200 μH TJ = 150 ˚C
Note: IEC 60747-8-4 Definitions
f = 1 MHz, VAC = 25 mV
VDD= 800 V, ID= 50 A
VDD = 800V, RLOAD = 8 Ω
VGS = +20/-2V, RG = 3.8 Ω
TJ = 25 ˚C
Note: IEC 60747-8-4 Definitions
Note
Fig.
4-7
Fig. 8
Fig.
16,17
Fig. 18
Fig. 15
Fig.
20-25
Symbol
Parameter
VSD Diode Forward Voltage
QC Total Capacitive Charge
IF Continuous Forward Current
Min.
Typ.
1.5
2.0
0.28
50
Max.
1.7
2.3
Unit
Test Conditions
V IF = 50 A, VGS = 0
IF = 50 A, TJ = 150 ˚C
μC
A VGS = -5 V, Tc = 90 ˚C
Note
Fig. 9
Thermal Characteristics
Symbol
RthJCM
RthJCD
Parameter
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Min.
NTC Characteristics
Symbol
Condition
R25
Delta R/R
P25
B25/50
B25/80
TC = 25 °C
TC = 100 °C, R100 = 481 Ω
TC = 25 °C
R2 = R25 exp[B25/50(1/T2-1/(298.15K))]
R2 = R25 exp[B25/80(1/T2-1/(298.15K))]
Typ.
0.37
0.42
Max.
0.40
0.43
Unit
˚C/W
Test Conditions
Tc = 90 ˚C, PD = 150 W
Tc = 90 ˚C, PD = 130 W
Note
Typ.
5
3380
3440
Max.
±5
Unit
%
mW
K
K
2 CCS050M12CM2,Rev. B
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CCS050M12CM2 Даташит, Описание, Даташиты
Typical Performance
200
Conditions:
TJ = -40 °C
tp < 50 µs
160
VGS = 20 V
VGS = 15 V
200
Conditions:
TJ = 25 °C
tp < 50 µs
160
VGS = 20 V
VGS = 15 V
120 120
80
40 VGS = 10 V
VGS = 5 V
0
0 3 6 9 12 15
Drain-Source Voltage, VDS (V)
Figure 1. Typical Output Characteristics TJ = -40 ˚C
80 VGS = 10 V
40
VGS = 5 V
0
0 3 6 9 12 15
Drain-Source Voltage, VDS (V)
Figure 2. Typical Output Characteristics TJ = 25 ˚C
200
Conditions:
TJ = 150 °C
tp < 50 µs
160
120
VGS = 20 V
VGS = 15 V
VGS = 10 V
80
40
0
0
VGS = 5 V
3 6 9 12
Drain-Source Voltage, VDS (V)
15
Figure 3. Typical Output Characteristics TJ = 150 ˚C
60
Conditions:
VGS = 20 V
50 tp < 50 µs
40
TJ = 150 °C
TJ = 125 °C
30
TJ = 25 °C
20 TJ = -40 °C
10
0
0 25 50 75 100
Drain Source Current, IDS (A)
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
3 CCS050M12CM2,Rev. B
2.0
Conditions:
1.8 IDS = 50 A
VGS = 20 V
1.6 tp < 50 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Figure 4. Normalized On-Resistance vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
12
TJ = -40 °C
TJ = 25 °C
Conditions:
IDS = 50 A
tp < 50 µs
TJ = 150 °C
13 14 15 16 17 18 19 20
Gate Source Voltage, VGS (V)
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
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