C3D02060A PDF даташит
Спецификация C3D02060A изготовлена «Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode». |
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Детали детали
Номер произв | C3D02060A |
Описание | Silicon Carbide Schottky Diode |
Производители | Cree |
логотип |
6 Pages
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C3D02060A
Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
Features
• 600-Volt Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies
• Power Factor Correction
- Typical PFC Pout : 300W-450W
Package
TO-220-2
PIN 1
PIN 2
Part Number
C3D02060A
VRRM =
600 V
IF (TC=135˚C) = 4 A
Qc =
4.8 nC
CASE
Package
TO-220-2
Marking
C3D02060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
8
4
2
12
9
21
19
65
39.5
17
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211536˚52C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TC=25˚C, tP=10 µS, Pulse
W TTCC==2151˚0C˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1 C3D02060A Rev. D
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Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.7
1.8 2.4
V
IIFF
=
=
2
2
AA TTJJ==2157°5C°C
IR Reverse Current
10 50
20 100
μA
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
4.8
nC
VdiR/d=t
600 V,
= 500
IAF/=μS2A
TJ = 25°C
C Total Capacitance
120
12
11
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-220 Package Thermal Resistance from Junction to Case
Typ.
3.8
Unit
°C/W
Note
Typical Performance
4.40.0 1.01E-005
3.35.5
3.30.0
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
2.25.5
2.20.0
1.15.5
1.10.0
0.05.5
8.0E-086
6.0E-066
Current 25C
Current 75C
Current 125C4.0E-046
Current 175C
2.0E-026
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°
Current 25C
Current 75C
Current 125C
Current 175C
00.0
00..00
00..55 11..00 11..55 22..00 22..55 33..00
VF
Forward Voltage
Forward Voltage
(V)
Figure 1. Forward Characteristics
0.0E+000
0 100 200 300 400 500 600 700 800
0 100 200 300 400 500 600 700 800
VR Reverse Voltage (V)
Reverse Bias (V)
Figure 2. Reverse Characteristics
2 C3D02060A Rev. D
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Typical Performance
C3D02060A Current Derating
2200
1188
1166 20% Duty*
30% Duty*
1144 50% Duty*
70% Duty*
1122 DC
1100
88
66
44
22
00 2255
5500 7755 110000 112255 115500 117755
TC
CaseTCTCeamse Tpeemrpaertauturree(˚(C)°C)
* Frequency > 1KHz
Figure 3. Current Derating
D3_2A_FP
6600
5500
4400
3300 D3_2A_FP
2200
1100
00
11
1100 101000
VR VRReRveevresreseVVoollttaaggee(V()V)
10010000
Figure 4. Capacitance vs. Reverse Voltage
1.0E+01
1.0E+00
1.0E-01
TBD
1.0E-02
1.0E-03
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
Tim e (s)
1.E-02
1.E-01
1.E+00
Figure 5. Transient Thermal Impedance
3 C3D02060A Rev. D
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Номер в каталоге | Описание | Производители |
C3D02060A | Silicon Carbide Schottky Diode | Cree |
C3D02060E | Silicon Carbide Schottky Diode | Cree |
C3D02060F | Silicon Carbide Schottky Diode | Cree |
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