DataSheet26.com

C3D04060E PDF даташит

Спецификация C3D04060E изготовлена ​​​​«Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode».

Детали детали

Номер произв C3D04060E
Описание Silicon Carbide Schottky Diode
Производители Cree
логотип Cree логотип 

6 Pages
scroll

No Preview Available !

C3D04060E Даташит, Описание, Даташиты
C3D04060E
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
600-Volt Schottky Rectifier
Optimized for PFC Boost Diode Application
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 400W-600W
Package
TO-252-2
PIN 1
PIN 2
Part Number
C3D04060E
VRRM = 600 V
IF (TC=135˚C) = 7.5 A
Qc = 8.5 nC
CASE
Package
TO-252-2
Marking
C3D04060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
15.5
7.5
4
22
17
31.9
28.5
110
75
32.5
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211535˚55C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TTCC==2151˚0C˚C, ,tPt=P=1100mmSS, ,HHalaflfSSinieneWWavaeveDD==00.3.3
A TC=25˚C, tP=10 µS, Pulse
W TTCC==2151˚0C˚C
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
1 C3D04060E Rev. E
Free Datasheet http://www.nDatasheet.com









No Preview Available !

C3D04060E Даташит, Описание, Даташиты
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.8
1.8 2.4
V
IIFF
=
=
4
4
AA TTJJ==2157°5C°C
IR Reverse Current
10 50
20 100
μA
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
8.5
nC
VdiR/d=t
600 V,
= 500
IAF/=μs4A
TJ = 25°C
C Total Capacitance
251
22
21
pF
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-252 Package Thermal Resistance from Junction to Case
Typ.
2.02
Unit
°C/W
Note
Typical Performance
8.80.0
7.70.0
6.60.0
TTTTJJJJ
=
=
=
=
25°C
75°C
125°C
175°C
5.50.0
4.40.0
3.30.0
2.20.0
1.10.0
00.0
00.0.0
00..55 11..00 11.5.5
22.0.0
VF ForwardVFVFoorlwtaargde(V()V)
22..55
Figure 1. Forward Characteristics
TO-220 4A
1010
99
88
77
Current(A)
Series2
Series3
Series4
66
55
44
33
22
11
TJ = 25°C
TJ = 75°C
TJ = 125°C
TJ = 175°C
Series1
Series2
Series3
Series4
00
33..00 00 110000 220000 330000 440000 550000 66000 0 707000 808000
VR RVReRveevresrsee VVooltaltgaeg(Ve) (V)
Figure 2. Reverse Characteristics
2 C3D04060E Rev. E
Free Datasheet http://www.nDatasheet.com









No Preview Available !

C3D04060E Даташит, Описание, Даташиты
Typical Performance
40
35
20% Duty*
30 30% Duty*
50% Duty*
70% Duty*
25 DC
20
15
10
5
0
25
50 75 100 125
TC
Case Temperature
* Frequency > 1KHz
(°C)
150
Figure 3. Current Derating
175
141400
121200
101000
8800
6600
4400
2200
00
11
"D2_4A_TO-220"
1100 110000
VVR RReRveevresersVeoVltoalgteag(Ve) (V)
"D2_4A_TO-220"
10100000
Figure 4. Capacitance vs. Reverse Voltage
3 C3D04060E Rev. E
Time (s)
Figure 5. Transient Thermal Impedance
Free Datasheet http://www.nDatasheet.com










Скачать PDF:

[ C3D04060E.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C3D04060ASilicon Carbide Schottky DiodeCree
Cree
C3D04060ESilicon Carbide Schottky DiodeCree
Cree
C3D04060FSilicon Carbide Schottky DiodeCree
Cree

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск