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Datasheet C4D08120A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C4D08120A | Silicon Carbide Schottky Diode C4D08120A
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 11 A 37 nC
Z-Rec Rectifier
Features
Package
• • • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extr |  Cree | diode |
C4D Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C4D02120A | Silicon Carbide Schottky Diode C4D02120A
®
Silicon Carbide Schottky Diode
VRRM = 1200 V IF (TC=135˚C) = 6 A Qc = 12 nC
Z-Rec Rectifier
Features Package
• • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Cree diode | | |
| 2 | C4D02120E | Silicon Carbide Schottky Diode C4D02120E
®
Silicon Carbide Schottky Diode
VRRM = 1200 V IF (TC=135˚C) = 7 A Qc = 12 nC
Z-Rec Rectifier
Features Package
• • • • • •
1.2kV Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Cree diode | | |
| 3 | C4D05120A | Silicon Carbide Schottky Diode C4D05120A
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 8A
Z-Rec Rectifier
Features Package
27 nC
• • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely F Cree diode | | |
| 4 | C4D05120E | Silicon Carbide Schottky Diode C4D05120E
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 9 A 27 nC
Z-Rec Rectifier
Features Package
• • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Cree diode | | |
| 5 | C4D08120A | Silicon Carbide Schottky Diode C4D08120A
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 11 A 37 nC
Z-Rec Rectifier
Features
Package
• • • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extr Cree diode | | |
| 6 | C4D08120E | Silicon Carbide Schottky Diode C4D08120E
®
Silicon Carbide Schottky Diode
VRRM = IF (TC=135˚C) Qc =
1200 V = 12 A 37 nC
Z-Rec Rectifier
Features
Package
• • • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extr Cree diode | | |
| 7 | C4D10120A | Silicon Carbide Schottky Diode C4D10120A
Silicon Carbide Schottky Diode
VRRM = 1200 V IF (TC=135˚C) = 14 A Qc = 52 nC
Z-Rec™ Rectifier
Features Package
• • • • •
1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fas Cree diode | |
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| Número de pieza | Descripción | Fabricantes | |
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