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C4D10120E PDF даташит

Спецификация C4D10120E изготовлена ​​​​«Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode».

Детали детали

Номер произв C4D10120E
Описание Silicon Carbide Schottky Diode
Производители Cree
логотип Cree логотип 

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C4D10120E Даташит, Описание, Даташиты
C4D10120E
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
1200-Volt Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Solar Inverters
Power Factor Correction
Package
VRRM = 1200 V
IF (TC=135˚C) = 16 A
Qc = 52 nC
TO-252-2
PIN 1
PIN 2
CASE
Part Number
C4D10120E
Package
TO-252-2
Marking
C4D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge
Current
Ptot Power Dissipation
Tc Maximum Case Temperature
TJ Operating Junction Range
Tstg Storage Temperature Range
1200
1300
1200
33
16
10
47
31
71
59
170
74
135
-55 to
+175
-55 to
+135
V
V
V
A TTTCCC===211535˚55C˚˚CC
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienepupluslese
W TTCC==2151˚0C˚C
˚C
˚C
˚C
Note
1 C4D10120E Rev. B
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C4D10120E Даташит, Описание, Даташиты
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
1.5 1.8
2.2 3
V
IIFF
=
=
10
10
AA TTJJ==2157°5C°C
IR Reverse Current
30 250
55 350
μA
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
52
nC
VdiR/d=t
800 V,
= 200
IAF/=μs10A
TJ = 25°C
C Total Capacitance
754
45
38
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC TO-252 Package Thermal Resistance from Junction to Case
Typ.
0.88
Unit
°C/W
Note
Typical Performance
20
18 TTTJJJ===-275555°°°CCC
16 TJ =125°C
TJ =175°C
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5
VF (V)
Figure 1. Forward Characteristics
4
5
4
3
2 TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
1
0
0 500 1000 1500
VR (V)
Figure 2. Reverse Characteristics
2000
2 C4D10120E Rev. B
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C4D10120E Даташит, Описание, Даташиты
Typical PerfCo4rDm10a1n20cEeCurrent Derating
18200
110
70
100
10% Duty
6900
20% Duty
30% Duty
80
50
70
50% Duty
70% Duty
DC
4600
50
30
40
2300
20
10
10
00
2255 5500 7755 110000 112255 115500
Tc CasTe TCem˚peCrature (°C)
117755
Figure 3. Current Derating
70
60
50
40
30
20
10
0
0 200 400 600 800 1000
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
180.0
160.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
25 50 75 100 125 150 175
TC ˚C
Figure 4. Power Derating
800
700
600
500
400
300
200
100
0
0.1
1 10 100
VR (V)
1000
Figure 6. Capacitance vs. Reverse Voltage
3 C4D10120E Rev. B
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Номер в каталогеОписаниеПроизводители
C4D10120ASilicon Carbide Schottky DiodeCree
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C4D10120DSilicon Carbide Schottky DiodeCree
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C4D10120ESilicon Carbide Schottky DiodeCree
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