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C2D10120A PDF даташит

Спецификация C2D10120A изготовлена ​​​​«Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode».

Детали детали

Номер произв C2D10120A
Описание Silicon Carbide Schottky Diode
Производители Cree
логотип Cree логотип 

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C2D10120A Даташит, Описание, Даташиты
C2D10120A
Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Package
TO-220-2
PIN 1
PIN 2
Part Number
C2D10120A
VRRM VRRM= = 1210200V0 V
IF (TC=I1F3 =C) 1=0 1A4.5 A
Qc Q c == 6 1 n6C1 nC
CASE
Package
TO-220-2
Marking
C2D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
IF Continuous Forward Current
IFRM Repetitive Peak Forward Surge Current
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TO-220 Mounting Torque
1200
V
1200
V
1200
31
14.5
10
50
V
A TTTCCC===211535˚52C˚˚CC
A TC=25˚C, tP=10 ms, Half Sine Wave
250 A TC=25˚C, tP=10 µs, Pulse
312
135
-55 to
+175
W TTCC==2151˚0C˚C
˚C
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Note
1 C2D10120 Rev. F
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C2D10120A Даташит, Описание, Даташиты
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
2.5 3.0
V
10
20
200
1000
µA
QC Total Capacitive Charge
61
nC
C Total Capacitance
1000
80
59
pF
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
10
10
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2155°0C°C
VdiR/d=t 1=205000V,AI/Fµ=s 10 A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.48
Unit
°C/W
Typical Performance
20
18
16
14
12
10
8
6
4
2
0
0
1.0 2.0 3.0
VF Forward Voltage (V)
4.0
Figure 1. Forward Characteristics
5.0
200
180
160
140
120
100
80
60
40
20
0
0
500 1000 1500
VR Reverse Voltage (V)
Figure 2. Reverse Characteristics
2000
2 C2D10120 Rev. F
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C2D10120A Даташит, Описание, Даташиты
C2D10120
Typical Performance
11000.00
909.0
808.00
707.0
606.0
505.0
404.00
303.00
202.00
101.00
0.00
2255
10% Duty*
20% Duty*
30% Duty*
50% Duty*
70% Duty*
DC
5500 7755 110000 112255
TC CaseCaTseemTepmerpaetrautruere(°C)
* Frequency > 1KHz
115500
117755
Figure 3. Current Derating
Page 1
800
350
325
300
275
250
225
200
175
150
125
100
75
50
25
0
25
50 75 100 125 150
Tc Case TTemCp˚eraCture (°C)
Figure 4. Power Derating
700
600
500
400
300
200
100
0
1
10 100
VR Reverse Voltage (V)
1000
175
Figure 5. Capacitance vs. Reverse Voltage
3 C2D10120 Rev. F
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Номер в каталогеОписаниеПроизводители
C2D10120Silicon Carbide Schottky DiodeCREE
CREE
C2D10120ASilicon Carbide Schottky DiodeCree
Cree
C2D10120DSilicon Carbide Schottky DiodeCree
Cree

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