C4D40120D PDF даташит
Спецификация C4D40120D изготовлена «Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode». |
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Детали детали
Номер произв | C4D40120D |
Описание | Silicon Carbide Schottky Diode |
Производители | Cree |
логотип |
5 Pages
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C4D40120D–Silicon Carbide Schottky Diode
Z-Rec™ Rectifier
VRRM =
IF; TC<135˚C
1200 V
= 54 A
Qc = 260 nC
Features
Package
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
• Extremely Fast Swtitching
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
TO-247-3
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Motor Drives
Part Number
C4D40120D
Package
TO-247-3
Marking
C4D40120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
VR
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
1300
1200
V
V
IF Continuous DC Current (Per Leg/Device) 27/54 A TC<135˚C, no AC component
IFRM
Repetitive Peak Forward Surge Current
91*
61*
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
IFSM
Non-Repetitive Forward Surge Current
130*
110*
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
Ptot Power Dissipation (Per Leg/Device)
266/532
114/228
W
TTCC==2151˚0C˚C
Tc Maximum Case Temperature
135 ˚C
TJ Operating Junction Range
Tstg Storage Temperature Range
-55 to
+175
-55 to
+135
˚C
˚C
TO-247 Mounting Torque
** Per Device, * Per Leg
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com/power
1
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Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.2
1.8
3
V
IIFF
=
=
20
20
A
A
TTJJ==2157°5C°C
IR Reverse Current
35
65
200
400
μA
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
130
nC VdiR/d=t 1=202000V,AI/Fμ=s 20A
TJ = 25°C
C Total Capacitance
1500
93
67
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
** Per Device, * Per Leg
Typical Performance (Per Leg)
Typ.
0.29**
0.57*
Max.
Unit
°C/W
Test Conditions
Note
40
35 TTTJJJ===-275555°°°CCC
TJ =125°C
30 TJ =175°C
25
20
15
10
5
0
012
VF (V)
3
4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
500 1000
VR (V)
1500
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C4D40120D Rev. C
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Typical Performance (Per Leg)
140
300.0
120 250.0
10% Duty
100
30% Duty
50% Duty
70% Duty
200.0
DC
80
150.0
60
100.0
40
20 50.0
0
25 50 75 100 125 150 175
TC ˚C
0.0
25 50 75 100 125 150 175
TC ˚C
Figure 3. Current Derating
Figure 4. Power Derating
140 1600
120 1400
1200
100
1000
80
800
60
600
40 400
20 200
0
0 200 400 600 800 1000 1200
VR (V)
0
0.1 1 10 100 1000
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
3 C4D40120D Rev. C
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Номер в каталоге | Описание | Производители |
C4D40120D | Silicon Carbide Schottky Diode | Cree |
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