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даташит 2SB648 PDF ( Datasheet )

2SB648 Datasheet Download - Hitachi

Номер произв 2SB648
Описание Silicon PNP Epitaxial
Производители Hitachi
логотип Hitachi логотип 

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2SB648 Даташит, Описание, Даташиты
2SB648, 2SB648A
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SD668/A
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
Tj
Tstg
Ratings
2SB648
–180
–120
–5
–50
–100
1
150
–55 to +150
2SB648A
–180
–160
–5
–50
–100
1
150
–55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
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2SB648 Даташит, Описание, Даташиты
2SB648, 2SB648A
Electrical Characteristics (Ta = 25°C)
2SB648
2SB648A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–180 —
–180 —
V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–120 —
–160 —
V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
V
IE = –10 µA, IC = 0
Collector cutoff current
DC current transfer
ratio
ICBO
h *1
FE1
Collector to emitter
saturation voltage
hFE2
VCE(sat)
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
capacitance
Cob
— — –10 — — –10 µA VCB = –160 V, IE = 0
60 — 320 60 — 200
VCE = –5 V,
IC = –10 mA
30 — — 30 — —
VCE = –5 V, IC = –1 mA
— — –2 — — –2 V
IC = –30 mA,
IB = –3 mA
— — –1.5 — — –1.5 V
VCE = –5 V,
IC = –10 mA
— 140 — — 140 — MHz VCE = –10 V,
IC = –10 mA
— 4.5 — — 4.5 — pF VCB = –10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SB648 and 2SB648A are grouped by hFE1 as follows.
2SB648
2SB648A
B
60 to 120
60 to 120
C
100 to 200
100 to 200
D
160 to 320
2
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2SB648 Даташит, Описание, Даташиты
2SB648, 2SB648A
Maximum Collector Dissipation
Curve
1.5
1.0
0.5
0 50 100 150
Ambient temperature Ta (°C)
Typical Output Characteristics
–20 –130
–120
–16
–110
–100
–90
–12 –80
–70
–60
–8 –50
–40
–30
–4 –20
–10 µA
IB = 0
0 –3 –4 –6 –8 –10
Collector to emitter Voltage VCE (V)
Typical Transfer Characteristics
–50
VCE = –5 V
–20
–10
–5.0
–2.0
–1.0
0
–0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage VBE (V)
DC Current Transfer Ratio
vs. Collector Current
240 VCE = –5 V Ta = 75°C
200
160 25
120 –25
80
40
0
–0.5 –1.0 –2
–5 –10 –20
Collector Current IC (mA)
–50
3
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