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NT5CC1024M4BN PDF даташит

Спецификация NT5CC1024M4BN изготовлена ​​​​«Nanya» и имеет функцию, называемую «4Gb DDR3 SDRAM B-Die».

Детали детали

Номер произв NT5CC1024M4BN
Описание 4Gb DDR3 SDRAM B-Die
Производители Nanya
логотип Nanya логотип 

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NT5CC1024M4BN Даташит, Описание, Даташиты
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP
NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Feature
VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard
Power Supply)
VDD = VDDQ = 1.35V -0.0675V/+0.1V
(Backward Compatible to VDD = VDDQ = 1.5V
±0.075V)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable Latency: 5, 6, 7, 8, 9, 10, 11
 WRITE Latency (CWL): 5,6,7,8,9
POSTED CAS ADDITIVE Programmable Additive
Latency (AL): 0, CL-1, CL-2 clock
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
Through ZQ pin (RZQ:240 ohm±1%)
8n-bit prefetch architecture
Output Driver Impedance Control
Differential bidirectional data strobe
Internal(self) calibration:Internal self calibration
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS compliance and Halogen free
Packages:
78-Balls BGA for x4/x8 components
96-Ball BGA for x16 components
REV 1.0
01/ 2012
1
Free Datasheet http://www.0PDF.com









No Preview Available !

NT5CC1024M4BN Даташит, Описание, Даташиты
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP
NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Description
The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing
4,294,967,296 bits. It is internally configured as an octal-bank DRAM.
The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA
packages.
REV 1.0
01/ 2012
2
Free Datasheet http://www.0PDF.com









No Preview Available !

NT5CC1024M4BN Даташит, Описание, Даташиты
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP
NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Pin Configuration 78 balls BGA Package (x4)
< TOP View>
See the balls through the package
1
VSS
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
2
VDD
VSSQ
DQ2
NC
VDDQ
VSS
VDD

BA0
A3
A5
A7

3
NC
DQ0
DQS

NC



BA2
A0
A2
A9
A13
x4
7
A NC
B DM
C DQ1
D VDD
E NC
F CK
G 
H A10/AP
J A15
K A12/
L A1
M A11
N A14
8
VSS
VSSQ
DQ3
VSS
NC
VSS
VDD
ZQ
VERFCA
BA1
A4
A6
A8
9
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.0
01/ 2012
3
Free Datasheet http://www.0PDF.com










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Номер в каталогеОписаниеПроизводители
NT5CC1024M4BN4Gb DDR3 SDRAM B-DieNanya
Nanya

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

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