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NT5CB128M16HP PDF даташит

Спецификация NT5CB128M16HP изготовлена ​​​​«Nanya» и имеет функцию, называемую «2Gb DDR3 SDRAM H-Die».

Детали детали

Номер произв NT5CB128M16HP
Описание 2Gb DDR3 SDRAM H-Die
Производители Nanya
логотип Nanya логотип 

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NT5CB128M16HP Даташит, Описание, Даташиты
2Gb DDR3 SDRAM H-Die
NT5CB128M16HP
NT5CC128M16HP
Feature
1.35V -0.067V/+0.1V & 1.5V ± 0.075V (JEDEC
Standard Power Supply)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable Latency: 5, 6, 7, 8, 9, 10,
11, 12, 13 and 14
 WRITE Latency (CWL): 5,6,7,8,9 and 10
POSTED CAS ADDITIVE Programmable Additive
Latency (AL): 0, CL-1, CL-2 clock
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8n-bit prefetch architecture
Output Driver Impedance Control
Through ZQ pin (RZQ:240 ohm±1%)
Differential bidirectional data strobe
Internal(self) calibration:Internal self calibration
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS Compliance and Halogen free
Packages:
96-Balls BGA for x16 components
Operating temperature
Commerical grade (0℃≦TC95)
For -BE,-CG,-DI, -EK, -FL
Industrial grade (-40℃≦TC95)
For -CGI,-DII
REV 1.4
02 /2013
1
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Free Datasheet http://www.0PDF.com









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NT5CB128M16HP Даташит, Описание, Даташиты
2Gb DDR3 SDRAM H-Die
NT5CB128M16HP
NT5CC128M16HP
Table 1: CAS Latency Frequency
Speed Bins
-BE*
DDR3(L)-1066-CL7
-CG/CGI*
DDR3(L)-1333-CL9
-DI/DII*
DDR3(L)-1600-CL11
-EK*
DDR3-1866-CL13
-FL*
DDR3-2133-CL14
Units
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Tck
(Avg.)
Clock
300 533 300 667 300 800 300 933 300 1066 MHz
Frequency
tRCD
13.125 - 13.125 -
13.125
- 13.91 -
ns
tRP
13.125 - 13.125 -
13.125
- 13.91 -
tRC
50.625
-
49.5
-
48.75
- 47.91 -
ns
ns
tRAS
37.5 70K 36 70K 35 70K 34 70K
ns
tCK(Avg.)@CL5
3.0
3.3
3.0
3.3
3.0
3.3
-
-
ns
tCK(Avg.)@CL6
2.5
3.3
2.5
3.3
2.5
3.3 2.5 3.3 2.5 3.3 ns
tCK(Avg.)@CL7
1.875
2.5
1.875
2.5
1.875
2.5
1.875
2.5
ns
tCK(Avg.)@CL8
1.875
2.5
1.875
2.5
1.875
2.5 1.875 2.5 1.875 2.5
ns
tCK(Avg.)@CL9
tCK(Avg.)@CL10
-
-
- 1.5 1.875 1.5 1.875
1.5 1.875 ns
-
1.5 1.875
1.5
1.875
1.5
1.875
1.5
1.875
ns
tCK(Avg.)@CL11
-
-
-
- 1.25 1.5
1.25 1.5 ns
tCK(Avg.)@CL12
tCK(Avg.)@CL13
tCK(Avg.)@CL14
1.07
1.25
1.07
0.935
1.25
1.07
ns
* The timing specification of high speed bin is backward compatible with low speed bin
REV 1.4
02 /2013
2
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Free Datasheet http://www.0PDF.com









No Preview Available !

NT5CB128M16HP Даташит, Описание, Даташиты
2Gb DDR3 SDRAM H-Die
NT5CB128M16HP
NT5CC128M16HP
Description
The 2Gb Double-Data-Rate-3 (DDR3(L)) H-die DRAM is double data rate architecture to achieve high-speed operation. It
is internally configured as an eight bank DRAMs.
The 2Gb chip is organized as 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed
double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA
packages.
REV 1.4
02 /2013
3
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Free Datasheet http://www.0PDF.com










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Номер в каталогеОписаниеПроизводители
NT5CB128M16HP2Gb DDR3 SDRAM H-DieNanya
Nanya

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