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даташит 14C40L PDF ( Datasheet )

14C40L Datasheet Download - International Rectifier

Номер произв 14C40L
Описание IRGB14C40L
Производители International Rectifier
логотип International Rectifier логотип 



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14C40L Даташит, Описание, Даташиты
PD - 93891A
IRGS14C40L
Ignition IGBT
IRGSL14C40L
IRGB14C40L
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
•Most Rugged in Industry
•Logic-Level Gate Drive
•> 6KV ESD Gate Protection
•Low Saturation Voltage
•High Self-clamped Inductive Switching Energy
TERMINAL DIAGRAM
Collector
Gate
R1
R2
•BVCES = 370V min, 430V max
•IC @ TC = 110°C = 14A
•VCE(on) typ= 1.2V @7A @25°C
• IL(min)=11.5A @25°C,L=4.7mH
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Emitter
JEDEC TO-263AB JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L IRGSL14C40L IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
Max Unit
Condition
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 110°C Continuous Collector Current
IG Continuous Gate Current
IGp Peak Gate Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ T = 110°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
VESD
Electrostatic Voltage
IL Self-clamped Inductive Switching Current
Clamped
20
V RG = 1K ohm
A VGE = 5V
14 A VGE = 5V
1 mA
10 mA tPK = 1ms, f = 100Hz
Clamped V
125 W
54 W
- 40 to 175 °C
- 40 to 175 °C
6 KV C = 100pF, R = 1.5K ohm
11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Min Typ
Max
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
40 °C/W
(PCB Mounted, Steady State)
ZθJC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
www.irf.com
Page 1
4/7/2000
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14C40L Даташит, Описание, Даташиты
Ignition IGBT
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Unit
Conditions
BVCES
BVGES
I CES
Collector-to-Emitter Breakdown Voltage
Gate-to-Emitter Breakdown Voltage
Collector-to-Emitter Leakage Current
370 400 430
10 12
15
100
V R G = 1K ohm, I C=7A, VGE = 0V
V I G=2m A
µA R G=1K ohm, VCE = 250V
µA R G=1K ohm, VCE = 250V, TJ =150°C
BVCER Emitter-to-Collector Breakdown Voltage
R 1 Gate Series Resistance
R 2 Gate-to-Emitter Resistance
24 28
V I C = -10m A
75 ohm
10 20 30 K ohm
Fig
On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Unit
Conditions
VCE(on) Collector-to-Emitter Saturation
Voltage
VGE(th) Gate Threshold Voltage
gfs Transconductance
1.2 1.40
1.35 1.55
1.35 1.55
1.5 1.7
1.55 1.75
1.6 1.8
1.3 1.8 2.2
0.75
1.8
10 15 19
I C = 7A, VGE = 4.5V
V I C = 10A, VGE = 4.5V
I C = 10A, VGE = 4.5V, TC= -40oC
I C = 14A, VGE = 5.0V, TC= -40oC
I C = 14A, VGE = 5.0V
I C = 14A, VGE = 5.0V, TC=150oC
V VCE = VGE, I C = 1 m A, TC=25oC
VCE = VGE, I C = 1 m A, TC=150oC
S VCE = 25V, I C = 10A, TC=25oC
I C Collector Current
20 A VCE = 10V, VGE = 4.5V
Fig
1
2
4
3, 5
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Unit
Conditions
Q g Total Gate charge
Q ge Gate - Emitter Charge
Q gc Gate - Collector Charge
27 I C = 10A, VCE=12V, VGE=5V
2.5 nC I C = 10A, VCE=12V, VGE=5V
10 I C = 10A, VCE=12V, VGE=5V
t d(on)
tr
t d(off)
Turn - on delay time
Rise time
Turn - off delay time
0.6 0.9 1.35
1.6 2.8 4
3.7 6 8.3
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
µs VGE=5V, RG=1K ohm, L=1mH, VCE=14V
VGE=5V, RG=1K ohm, L=1mH, VCE=300V
C ies
C oes
C res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
550 825
100 150
12 18
VGE=0V, VCE=25V, f=1M H z
pF VGE=0V, VCE=25V, f=1M H z
VGE=0V, VCE=25V, f=1M H z
25 L=0.7m H, TC=25°C
I L Self-Clamped
15.5 A L=2.2m H, TC=25°C
Inductive Switching Current
11.5
L=4.7m H, TC=25°C
16.5 L=1.5m H, TC=150°C
7.5 L=4.7m H, TC=150°C
6 L=8.7m H, TC=150°C
TJ =150oC,
t SC Short Circuit Withstand Time 120 µs VCC = 16V, L = 10µH
R G = 1K ohm, VGE = 5V
Fig
7
15
12
14
6
9
10
13
14
14
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Page 2
4/7/2000
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14C40L Даташит, Описание, Даташиты
Ignition IGBT
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Fig.1 - Typ. Output Characteristics
TJ=25°C
60
VGE = 10 V
VGE = 5.0V
50 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
40
Fig.2 - Typ. Output Characteristics
TJ=125°C
60
VGE = 10 V
50 VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
40 VGE = 3.7V
30 30
20 20
10 10
0
0123456
VCE (V)
0
0123456
VCE (V)
Fig.3 - Transfer Characteristics
VCE=20V; tp=20µs
100
90 TJ = 25°C
TJ = 125°C
80
70
60
50
40
30
20
10
0
02
www.irf.com
46
VGE (V)
8
10
Page 3
Fig.4 - Typical VCE vs TJ
VGE=4.5V
1.6
1.5
IC = 10A
1.4
1.3
1.2
1.1 IC = 7A
1.0
-50 0 50 100 150 200
TJ (°C)
4/7/2000
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