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10NB37LZ Datasheet Download - STMicroelectronics

Номер произв 10NB37LZ
Описание STGB10NB37LZ
Производители STMicroelectronics
логотип STMicroelectronics логотип 



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10NB37LZ Даташит, Описание, Даташиты
® STGB10NB37LZ
N-CHANNEL CLAMPED 10A D2PAK
INTERNALLY CLAMPED PowerMESHIGBT
TYPE
V CES
VCE(s at)
IC
STGB10NB37LZ CLAMPED < 1.8 V 10 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
APPLICATIONS
s AUTOMOTIVE IGNITION
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VCES Collector-Emitter Volt age (VGS = 0)
VECR
VGE
IC
IC
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM()
Ptot
Collector Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
ESD ESD (Human Body Model)
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1999
Value
CLA M PE D
18
CLA M PE D
20
20
60
125
0. 83
4
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /o C
KV
oC
oC
1/8
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10NB37LZ Даташит, Описание, Даташиты
STGB10NB37LZ
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
1. 2
62.5
0. 2
oC/W
oC/W
oC/W
OFF
Symbo l
BV (CES)
B V(ECR)
BV GE
ICES
IGES
RGE
P ar am et e r
Test Conditions
Clamped Voltage
IC = 2 mA
Tj = - 40 to 150 oC
VGE = 0
Emitter Collector
Break-down Voltage
Gate Emitter
Break-down Voltage
Collector cut-off
Current (VGE = 0)
IC = 75 mA
Tj = - 40 to 150 oC
IC =± 2 mA
Τj = - 40 to 150 oC
VCE = 15 V VGE = 0
VCE = 200 V VGE = 0
V GE = 0
Tj = 150 oC
Tj = 150 oC
Gate-Emitter Leakage VGE = ± 10 V
Current (VCE = 0)
VCE = 0
Gate Emitter Resistance
Min.
375
18
12
Typ.
400
20
Max.
425
16
10
100
± 0.7
Unit
V
V
V
µA
µA
mA
K
ON ()
Symbo l
VGE(th)
VCE(SAT )
IC
P ar am et e r
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Collector Current
Test Conditions
VCE = VGE IC = 250 µA
Tj = - 40 to 150 oC
VGE = 4.5 V IC = 10 A
VGE = 4.5 V IC = 10 A
Tj = 25 oC
Tj = - 40 oC
VGE = 4.5 V
VCE = 9 V
Min.
0.6
20
Typ.
1.2
1.3
Max.
2.4
1.8
Unit
V
V
V
A
DYNAMIC
Symbo l
gf s
Cies
Co es
Cres
QG
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
Test Conditions
Min.
VCE = 25 V
IC = 10 A 10
Typ.
18
Max.
Unit
S
VCE = 25 V f = 1 MHz VGE = 0
1250
103
18
1700
140
25
pF
pF
pF
VCE = 320 V IC = 10 A VGE = 5 V
28
nC
2/8
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10NB37LZ Даташит, Описание, Даташиты
STGB10NB37LZ
FUNCTIONAL CHARACTERISTICS
Symbo l
P ar am et e r
II Latching Current
U.I. S.
Unclamped Inductive
Switching Current
Functional Test
EAS Single Pulse
Avalanche Energy
EAR Reverse Avalanche
E ne rg y
Test Conditions
VCLAMP = 320 V
RGOFF = 1 K
VGE = 5 V
TC = 125 oC
RGOFF=1 KL =200 µH Tj = 125 oC
Min.
20
15
RGOFF=1 KL =3 mH
Tstart = 55 oC
Tstart = 55 oC
Tstart = 150 oC
Tc = 125 oC duty cycle < 1%
pulse width limited by tjmax
12
Typ.
Max.
215
150
10
Unit
A
A
A
mJ
mJ
mJ
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Eo n
P ar am et e r
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 320 V
VGE= 5 V
IC = 10 A
RG = 1 K
VCC = 320 V
RG = 1 K
IC = 10 A
VGE = 5 V
Min.
Typ.
520
340
17
180
Max.
Unit
ns
ns
A/µs
µJ
SWITCHING OFF
Symbo l
P ar am et e r
Test Conditions
Min. Typ. Max. Unit
tc
tr(voff)
tf
td (o ff)
Eo ff(**)
Cross-O ver Time
VCLAMP = 320 V
Off Volt age Rise Time RGE = 1 K
Fall Time
Off Voltage Delay Time
Turn-off Switching Loss
IC = 10 A
VGE = 5 V
4
2.2
1.5
14.8
4.0
µs
µs
µs
µs
mJ
tc
tr(voff)
tf
td (o ff)
Eo ff(**)
Cross-O ver Time
VCLAMP = 320 V
Off Volt age Rise Time RGE = 1 K
Fall Time
Off Volt age Delay Time Tj = 125 oC
Turn-off Switching Loss
IC = 10 A
VGE = 5 V
5.2
2.8
2
15.8
6.5
µs
µs
µs
µs
mJ
() Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**)Losses Include Also The Tail (jedec Standardization)
Safe Operating Area
Thermal Impedance
3/8
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