DataSheet26.com

85U03GH PDF даташит

Спецификация 85U03GH изготовлена ​​​​«Advanced Power Electronics» и имеет функцию, называемую «AP85U03GH».

Детали детали

Номер произв 85U03GH
Описание AP85U03GH
Производители Advanced Power Electronics
логотип Advanced Power Electronics логотип 

5 Pages
scroll

No Preview Available !

85U03GH Даташит, Описание, Даташиты
Advanced Power
Electronics Corp.
AP85U03GH
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
5.5mΩ
75A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
EAS
TSTG
TJ
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
75
56
220
60
0.48
57.6
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62.5
110
Units
V
V
A
A
A
W
W/
mJ
Units
/W
/W
/W
Data & specifications subject to change without notice
1
200807174
Free Datasheet http://www.Datasheet4U.com









No Preview Available !

85U03GH Даташит, Описание, Даташиты
AP85U03GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
30 - - V
- - 5.5 m
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=30V, VGS=0V
VGS=+20V
ID=30A
VDS=24V
VGS=4.5V
VDS=15V
ID=30A
RG=3.3Ω,VGS=10V
RD=0.5Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
- - 12 m
1 - 3V
- 27.5 -
S
- - 1 uA
- - +100 nA
- 29 46 nC
- 6.4 - nC
- 19 - nC
- 10 - ns
- 84 - ns
- 27 - ns
- 83 - ns
- 2400 3840 pF
- 395 - pF
- 390 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 33 - ns
- 30 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Package limitation current is 75A .
4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω , IAS=24A.
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Free Datasheet http://www.Datasheet4U.com









No Preview Available !

85U03GH Даташит, Описание, Даташиты
200
T C =25 o C
160
120
80
10V
7.0 V
5.0V
4.5 V
40
V G = 3.0 V
0
0.0 2.0 4.0 6.0
V DS , Drain-to-Source Voltage (V)
8.0
Fig 1. Typical Output Characteristics
14
I D =30A
12 T C =25 o C
10
8
6
4
2
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
50
40
30
T j =175 o C
T j =25 o C
20
10
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
AP85U03GH
100
T C =175 o C
10V
7 .0V
80 5.0V
4.5 V
60
40
V G =3.0V
20
0
0.0 2.0 4.0 6.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =40A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
200
1.2
0.8
0.4
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
200
3
Free Datasheet http://www.Datasheet4U.com










Скачать PDF:

[ 85U03GH.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
85U03GHAP85U03GHAdvanced Power Electronics
Advanced Power Electronics

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск