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Datasheet C5198 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C5198 | NPN Transistor, 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
2SC5198
Unit: mm
• High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
|  Toshiba Semiconductor | data |
| 2 | C5198 | Power Transistor Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
POWER TRANSISTORS
A1941 C5198
(9TW) (9TW)
PNP NPN
TO- 3PN Non Isolated Plastic Package
Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise ) VALUE DESCRIPTION SYMB |  CDIL | transistor |
C51 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C5100 | Silicon NPN Triple Diffused Planar Transistor 2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5100 10m  Sanken electric transistor | | |
| 2 | C5101 | NPN Transistor, 2SC5101 2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC5101 10 Sanken electric data | | |
| 3 | C5103 | NPN Transistor, 2SC5103 www.datasheet4u.com
2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
!Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units  ROHM Electronics data | | |
| 4 | C5106 | NPN Transistor, 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5106
2SC5106
For VCO Application
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation J  Toshiba data | | |
| 5 | C5108 | NPN Transistor, 2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
2SC5108
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dis Toshiba data | | |
| 6 | C511 | 8-Bit CMOS Microcontroller Microcomputer Components
8-Bit CMOS Microcontroller
C511/C511A C513/C513A C513A-H
Data Sheet 06.96
Data Sheet C511/C511A/C513/C513A/C513A-H Revision History : Current Version : 06.96 Previous Releases : Page Several 41 02.96, 05.95 Subjects (changes since last revision) Corrections of text Figure  Siemens controller | | |
| 7 | C5110 | NPN Transistor, 2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5110
2SC5110
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dis Toshiba data | |
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