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C5488 PDF даташит

Спецификация C5488 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC5488».

Детали детали

Номер произв C5488
Описание NPN Transistor - 2SC5488
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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C5488 Даташит, Описание, Даташиты
Ordering number:ENN6288
NPN Epitaxial Planar Silicon Transistor
2SC5488
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Features
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm×0.8mm×0.6mm)
Package Dimensions
unit:mm
2159
[2SC5488]
1.4
0.25
3
0.1
12
0.45
0.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Marking : LN
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
Cre
| S21e |2 1
| S21e |2 2
NF
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=20mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Ratings
20
10
2
70
100
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Ratings
min typ
90
57
0.7
0.45
9 12
8.5
1.0
max
1.0
10
200
1.2
1.8
Unit
µA
µA
GHz
pF
pF
dB
dB
dB
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1099TS (KOTO) TA-1675 No.6288–1/4
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C5488 Даташит, Описание, Даташиты
2SC5488
hFE -- IC
3
2
VCE=5V
2
10
100 7
75
5
3
3
2
2
f T -- IC
VCE=5V
10
7
5
3 5 7 1.0
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
IT01363
Cob -- VCB
3
f=1MHz
2
1.0
7
5
7 1.0
3
2
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC – mA
IT01364
Cre -- VCB
f=1MHz
1.0 1.0
77
55
33
22
0.1
7
5
7 0.1
14
12
2 3 5 7 1.0 2 3 5 7 10
Collector-to-Base Voltage, VCB -- V
S21e2 -- IC
23
IT01365
f=1GHz
10
8
6
4
2
0
3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC – mA
IT01367
PC -- Ta
120
0.1
7
5
7 0.1
12
10
2 3 5 7 1.0 2 3 5 7 10
Collector-to-Base Voltage, VCB -- V
NF -- IC
23
IT01366
VCE=5V
f=1GHz
8
6
4
2
0
3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC – mA
IT01368
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
IT01369
No.6288–2/4
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C5488 Даташит, Описание, Даташиты
2SC5488
S Parameters (Common emitter)
VCE=5V, IC=7mA, ZO=50
Freq (MHz)
100
| S11 |
0.786
S11
–40.7
200
0.677
–72.4
400
0.546
–112.7
600
0.492
–135.2
800
0.473
–150.0
1000
0.465
–160.0
1200
0.457
–169.5
1400
0.451
–176.2
1600
0.449
177.8
1800
0.454
172.5
2000
0.460
167.1
| S21 |
17.507
13.998
9.061
6.442
5.005
4.073
3.449
2.989
2.658
2.378
2.154
VCE=5V, IC=20mA, ZO=50
Freq (MHz)
100
| S11 |
0.601
200 0.497
400 0.435
600 0.419
800 0.414
1000
0.413
1200
0.413
1400
0.411
1600
0.413
1800
0.416
2000
0.422
S11
–65.8
–103.7
–139.6
–156.6
–166.6
–174.0
178.6
173.8
169.6
165.1
160.3
| S21 |
28.967
19.309
10.891
7.461
5.695
4.613
3.870
3.345
2.960
2.655
2.406
S21
151.3
131.4
108.6
96.1
87.3
80.4
74.0
68.6
63.8
58.4
54.0
S21
137.1
116.6
98.6
89.3
82.5
77.0
71.8
66.9
62.7
58.0
54.0
| S12 |
0.028
0.046
0.064
0.076
0.087
0.099
0.111
0.124
0.138
0.151
0.166
| S12 |
0.023
0.035
0.050
0.065
0.081
0.098
0.144
0.131
0.148
0.165
0.182
VCE=2V, IC=3mA, ZO=50
Freq (MHz)
100
| S11 |
0.888
200 0.815
400 0.690
600 0.616
800 0.584
1000
0.566
1200
0.555
1400
0.546
1600
0.541
1800
0.545
2000
0.547
S11
–30.2
–56.4
–96.0
–120.7
–138.0
–150.7
–161.2
–169.3
–176.4
177.1
170.9
| S21 |
9.280
8.218
6.074
4.517
3.610
2.995
2.540
2.213
1.982
1.774
1.614
S21
158.6
141.3
116.7
101.4
90.4
81.9
74.2
67.5
62.0
55.9
50.9
| S12 |
0.038
0.067
0.098
0.122
0.120
0.125
0.131
0.137
0.143
0.152
0.163
S12
70.1
58.0
49.6
49.3
50.8
52.6
54.0
55.2
56.6
56.7
56.7
S12
64.1
57.0
58.7
61.3
63.1
63.8
63.9
63.6
63.2
61.8
60.6
S12
73.6
60.5
45.1
38.4
35.8
35.7
36.5
38.4
40.7
42.5
44.7
| S22 |
0.898
0.739
0.525
0.423
0.374
0.346
0.332
0.321
0.319
0.313
0.311
| S22 |
0.757
0.534
0.345
0.280
0.251
0.235
0.226
0.221
0.220
0.219
0.218
| S22 |
0.949
0.849
0.657
0.539
0.475
0.434
0.410
0.393
0.391
0.382
0.381
S22
–20.4
–33.4
–43.7
–46.7
–44.4
–49.7
–51.6
–54.1
–56.2
–60.0
–63.2
S22
–32.9
–50.3
–50.3
–50.7
–51.3
–52.9
–55.1
–57.7
–60.2
–64.8
–68.3
S22
–15.1
–26.9
–41.1
–47.6
–51.2
–54.5
–57.5
–60.7
–64.0
–67.8
–72.1
No.6288–3/4
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