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CEB14A04 PDF даташит

Спецификация CEB14A04 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB14A04
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB14A04 Даташит, Описание, Даташиты
CEP14A04/CEB14A04
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 180A, RDS(ON) = 5m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS
VGS
ID@ TC = 25 C
ID@ TC = 100 C
IDM
PD
40
±20
180
125
720
200
1.3
EAS
IAS
TJ,Tstg
633
65
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2011.Nov
http://www.cetsemi.com
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CEB14A04 Даташит, Описание, Даташиты
CEP14A04/CEB14A04
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 70A
VDS = 25V, ID = 70A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 28V, ID = 10A,
VGS = 10V, RGEN = 4.5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 32V, ID = 70A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 70A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.3mH, IAS = 65A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Min
40
2
Typ
4.2
30
3390
1445
185
32
20
82
35
110
14.4
44.4
Max Units
25
100
-100
V
µA
nA
nA
4V
5 m
S
pF
pF
pF
64 ns
40 ns
164 ns
70 ns
143 nC
nC
nC
180 A
1.3 V
2
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CEB14A04 Даташит, Описание, Даташиты
CEP14A04/CEB14A04
180
150 VGS=10,9,8,7V
120 VGS=6V
90
60 VGS=5V
30
0
0 0.5
1 1.5
2 2.5 3
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
240
25 C
180
120
60 TJ=125 C
-55 C
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
6600
5500
4400
3300
Ciss
2200
Coss
1100
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6 ID=70A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
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Номер в каталогеОписаниеПроизводители
CEB14A04N-Channel Enhancement Mode Field Effect TransistorCET
CET

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