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CEB6060N PDF даташит

Спецификация CEB6060N изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB6060N
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB6060N Даташит, Описание, Даташиты
CEP6060N/CEB6060N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 42A, RDS(ON) = 25m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
60
±20
42
168
88
0.59
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
62.5
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Oct.
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CEB6060N Даташит, Описание, Даташиты
CEP6060N/CEB6060N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 24A
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 24A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 19A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 38A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 24A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 42A .
g.Full package VSD test condition IS = 42A .
h.L = 0.19mH, IAS = 42A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Min
60
2
Typ
19
40
1320
310
40
16
3
36
4
28.7
6.3
9.7
Max Units
25
100
-100
V
µA
nA
nA
4V
25 m
S
pF
pF
pF
32 ns
6 ns
72 ns
8 ns
38.1 nC
nC
nC
42 A
1.3 V
4
2
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CEB6060N Даташит, Описание, Даташиты
CEP6060N/CEB6060N
30
VGS=10,9,8,7,6,5V
25
VGS=4V
20
120
25 C
90
15
10
VGS=3V
5
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
60
30
TJ=125 C
-55 C
0
1234567
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3000
2500
2000
1500
1000
Ciss
500 Coss
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6 ID=24A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.2 0.6 1.0 1.4 1.8 2.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
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