SCS215AE PDF даташит
Спецификация SCS215AE изготовлена «ROHM Semiconductor» и имеет функцию, называемую «SiC Schottky Barrier Diode». |
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Детали детали
Номер произв | SCS215AE |
Описание | SiC Schottky Barrier Diode |
Производители | ROHM Semiconductor |
логотип |
6 Pages
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SCS215AE
SiC Schottky Barrier Diode
VR 650V
IF 15A
QC 23nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer Shottoky Diode
lOutline
TO-247
Data Sheet
lInner circuit
(1) (2) (3)
(1) N/C
(2) Cathode
(3) Anode
(1) (2) (3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
30
C
SCS215AE
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM 650
VR 650
IF 15*1
55*2
IFSM
200*3
43*4
IFRM
61*5
PD 110*6
Junction temperature
Tj 175
Range of storage temperature
Tstg -55 to +175
*1 Tc=130°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10%
*6 Tc=25°C
Unit
V
V
A
A
A
A
A
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
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2014.01 - Rev.A
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SCS215AE
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.3mA
600 -
-
IF=15A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=15A,Tj=150°C
- 1.55 -
IF=15A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 3 300
Reverse current
IR VR=600V,Tj=150°C
- 45 -
VR=600V,Tj=175°C
- 105 -
Total capacitance
VR=1V,f=1MHz
C
VR=600V,f=1MHz
- 550 -
- 56 -
Total capacitive charge
Qc VR=400V,di/dt=350A/ms - 23 -
Switching time
tc VR=400V,di/dt=350A/ms - 18 -
Unit
V
V
V
V
mA
mA
mA
pF
pF
nC
ns
lThermal characteristics
Parameter
Thermal resistance
Symbol
Rth(j-c)
Conditions
-
Values
Min. Typ. Max.
Unit
- 1.1 1.3 °C/W
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.01 - Rev.A
No Preview Available ! |
SCS215AE
lElectrical characteristic curves
Data Sheet
Fig.1 VF - IF Characteristics
100
Pulsed
10 Ta=175ºC
1 Ta=125ºC
0.1
0.01
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.001
0.0
0.5 1.0 1.5 2.0 2.5
Forward Voltage : VF [V]
Fig.2 VF - IF Characteristics
30
Pulsed
25 Ta= -25ºC
20 Ta=25ºC
Ta=75ºC
15 Ta=125ºC
10 Ta=175ºC
5
0
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
100
10 Ta=175ºC
Ta=125ºC
1 Ta=75ºC
0.1
Ta=25ºC
0.01
0.001
0
Ta= -25ºC
100 200 300 400 500 600
Reverse Voltage : VR [V]
Fig.4 VR-Ct Characteristics
1,000
100
Ta=25ºC
f=1MHz
10
0.01
0.1
1
10 100 1000
Reverse Voltage : VR [V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.01 - Rev.A
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Номер в каталоге | Описание | Производители |
SCS215AE | SiC Schottky Barrier Diode | ROHM Semiconductor |
SCS215AG | SiC Schottky Barrier Diode | ROHM Semiconductor |
SCS215AJ | SiC Schottky Barrier Diode | ROHM Semiconductor |
SCS215AM | SiC Schottky Barrier Diode | ROHM Semiconductor |
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