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CJPF10N60 PDF даташит

Спецификация CJPF10N60 изготовлена ​​​​«JIANGSU CHANGJIANG» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв CJPF10N60
Описание N-Channel Power MOSFET / Transistor
Производители JIANGSU CHANGJIANG
логотип JIANGSU CHANGJIANG логотип 

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CJPF10N60 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS
CJP10N60,CJPF10N60 N-Channel Power MOSFET
TO-220-3L/TO-220F
Description
The C JP10N60/CJPF10N60 is a high volt age and high current
power MOSFET , design ed to ha ve c haracteristics, such as fast
switching time, low gate charge, lo w on-st ate resist ance and have
rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient DC
to DC converters and bridge circuits.
FEATURES
z Low Crss
z Fast Switching
z 100% avalanche tested
1. GATE
2. DRAIN
3. SOURCE
2.Drain
1.Gate
3.Source
Maximum ratings (Ta=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID 10
PD 2
RθJA 62.5
TJ
Tstg -50
Value
600
±30
150
~+150
Unit
V
A
W
/W
C,Mar,2014
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CJPF10N60 Даташит, Описание, Даташиты
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage (note1)
Gate-Body Leakage Current (note1)
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance (note1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR) DSS
VGS(th)
IGSS
IDSS
RDS(on)
Ciss
Coss
Crss
Test Condition
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =0V, VGS =±30V
VDS =600V, VGS =0V
VGS =10V, ID =5A
VDS =25V,VGS =0V,
f =1MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
tf
VDD=325V,ID=10A,
RG=25
Forward on Voltage(note1)
VSD
Notes:
1. Pulse Test : Pulse Width300µs, Duty Cycle 2%.
VGS =0V, IS=10A
Min Typ Max Unit
600
V
2.0 4.0
±100
nA
10 µA
1
1430
117 pF
2.2
46
74
ns
340
66
1.4 V
C,Mar,2014









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CJPF10N60 Даташит, Описание, Даташиты
Typical Characteristics CJP/PF10N60
10
Pulsed
8
6
Output Characteristics
V = 6V8V10V
GS
V =5V
GS
4
2
V =4.5V
GS
0
0 10 20 30
DRAIN TO SOURCE VOLTAGE V (V)
DS
1.2
T =25
a
Pulsed
1.0
0.8
R
DS(ON)
——
I
D
V =10V
GS
40
0.6
0.4
0.2
0.0
1
2
10
Pulsed
46
DRAIN CURRENT I (A)
D
8
I
S
——
V
SD
10
1
T =100
a
0.1
T =25
a
12
V =50V
DS
Pulsed
10
Transfer Characteristics
8
T =100
a
6
T =25
a
4
2
0
01234567
GATE TO SOURCE VOLTAGE V (V)
GS
R —— V
DS(ON)
GS
7
Pulsed
6
I =5A
D
5
T =100
a
4
3
T =25
a
2
1
0
2 4 6 8 10 12
GATE TO SOURCE VOLTAGE V (V)
GS
Threshold Voltage
5
4
I =250uA
D
3
2
0.01
1
1E-3
0.0
0.2 0.4 0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE V (V)
SD
1.2
0
25 50 75 100 125
JUNCTION TEMPERATURE T ()
J
C,Mar,2014










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